MT53E256M32D1KS-046 IT:L

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MT53E256M32D1KS-046 IT:L

DRAM LPDDR4 8Gbit 32 200/264 VFBGA 1 IT

  • FabricantMicron
  • Mfr. Partie #MT53E256M32D1KS-046 IT:L
  • Paquet
  • Fiche de données
  • En stock15328

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Spécifications

Packaging Tray
Standard Pack Qty 1360

Vue d'ensemble

Description

The MT53E256M32D1KS-046 IT:L is a type of DRAM (Dynamic Random Access Memory) produced by Micron Technology. Specifically, it is a DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic RAM) with a capacity of 256 megabits (32 megabytes) per chip.
Key specifications include:
- Organization: 256M x 32 bits, indicating 256 million rows of 32 bits each.
- Speed Grade: 046, which denotes a specific speed or frequency at which the memory operates, typically around 2400 MT/s (mega-transfers per second).
- IT: Refers to the industrial temperature range, indicating the chip is designed to operate in harsher environmental conditions (typically -40°C to +95°C).
- L: Usually denotes a lead-free or environmentally friendly package.
This memory chip is commonly used in applications requiring reliable and efficient memory performance, including networking equipment, industrial systems, and telecommunications.

Features

The MT53E256M32D1KS-046 IT:L is a 256Mb (32MB) DDR3 SDRAM memory chip manufactured by Micron Technology. Key features include:
1. Organization: It has a 256M x 32-bit configuration, allowing for high data throughput.
2. Speed: Operates at a clock frequency up to 1066 MT/s (megatransfers per second).
3. Data Rate: DDR3 technology enables double data rate processing, effectively doubling the data transfer rate.
4. Interface: Utilizes a high-speed, parallel interface with a wide data bus.
5. Power: Operates at a low voltage of 1.5V, improving energy efficiency compared to older memory types.
6. Temperature Grade: Rated for industrial temperature range (-40°C to +95°C), suitable for harsh environments.
7. Package Type: Comes in a compact FBGA (Fine Ball Grid Array) package, facilitating easier integration into various electronic applications.
This memory chip is ideal for applications requiring reliable performance in industrial and embedded systems.

Package

The MT53E256M32D1KS-046 IT:L is a DRAM memory chip packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This packaging provides a compact design suitable for high-density applications, facilitating efficient thermal management and electrical performance.

Pinout

The MT53E256M32D1KS-046 IT:L is a DDR4 SDRAM memory device manufactured by Micron Technology. It features a total of 78 pins.
The key functions of the pins include:
- Data Pins (DQ): 32 data input/output pins for reading and writing data.
- Address Pins (A): Used for addressing memory locations.
- Control Pins: Including CLK (clock), CS (chip select), RAS (row address strobe), CAS (column address strobe), and WE (write enable) for controlling data operations.
- Bank Address Pins (BA): Selects the bank within the memory.
- VDD/VSS Pins: Power and ground connections.
- DQML, DQMH Pins: Data masks for byte-level control.
- ODT Pins: On-die termination control.
This device is designed for high-performance applications, supporting various features like low power consumption and high bandwidth.

Manufacturer

The MT53E256M32D1KS-046 IT:L is manufactured by Micron Technology, Inc. Micron is an American company that specializes in semiconductor manufacturing, particularly in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron produces a wide range of products, including DRAM, NAND flash memory, and solid-state drives (SSDs). The company's technologies are used in various applications, such as computing, mobile devices, and data centers. Micron is recognized as one of the leading manufacturers in the global memory market, focusing on innovation and high-performance products to meet the demands of modern computing and data storage.

Application

The MT53E256M32D1KS-046 IT:L is a DDR4 DRAM memory chip primarily used in high-performance computing applications, including networking equipment, servers, data centers, and enterprise storage solutions. Its features support applications requiring fast data transfer rates and high bandwidth, making it suitable for tasks such as big data analytics, virtualization, and real-time processing in cloud computing environments.

Equivalent

The MT53E256M32D1KS-046 IT:L chip is a 256Mb DDR4 SDRAM memory device. Equivalent products include the Micron MT53E256M32D1FW-046 IT:L, Samsung K4A8G085WB-BCRC, and Hynix H5AN8G8NDJR. Ensure compatibility with your specific application requirements when selecting alternatives.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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