MT53D512M16D1DS-046 WT:D

Les images sont à titre de référence seulement

MT53D512M16D1DS-046 WT:D

DRAM LPDDR4 8Gbit 16 200/264 WFBGA 1 WT

  • Fabricant
  • Mfr. Partie #MT53D512M16D1DS-046 WT:D
  • Paquet
  • Fiche de données
  • En stock320

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Packaging Tray
Standard Pack Qty 1360

Vue d'ensemble

Description

The MT53D512M16D1DS-046 WT:D is a high-performance DRAM memory component manufactured by Micron Technology. It features a 512 Meg x 16 configuration, making it suitable for a range of applications including mobile devices, automotive systems, and other embedded solutions. This memory chip operates at a frequency of 1.6 Gbps and uses a DDR4 interface, ensuring efficient data transfer rates and improved power efficiency compared to previous generations.
The "046" in the part number typically indicates the speed grade, while "WT:D" denotes specific packaging and temperature range characteristics. This DRAM is designed for applications requiring high bandwidth and low latency, making it ideal for performance-critical tasks. Its compact form factor and robust design enhance reliability and durability in diverse operating environments. Micron's commitment to quality ensures that this component meets industry standards for performance and longevity, making it a preferred choice among developers and engineers.

Features

The MT53D512M16D1DS-046 WT:D is a high-performance DRAM memory chip developed by Micron Technology, specifically designed for mobile applications. Key features include:
1. Memory Type: It is a 512Mb (64MB) DDR3 SDRAM, utilizing a 16-bit data bus.
2. Speed: The chip operates at a frequency of 400 MHz, with a data rate of 800 MT/s (megatransfers per second).
3. Voltage: It operates at a low supply voltage of 1.5V, enhancing power efficiency.
4. Package: The component is available in a compact package, facilitating integration into space-constrained designs.
5. Applications: It is suitable for mobile devices, including smartphones, tablets, and other portable electronics.
6. Features: Includes features like burst mode, on-die termination, and burst lengths of 4 or 8, which optimize performance and power consumption.
This chip is ideal for applications requiring efficient, high-speed data transfer in mobile environments.

Package

The MT53D512M16D1DS-046 WT:D is packaged in a 78-ball FBGA (Fine Pitch Ball Grid Array) form factor. This type of package is commonly used for memory devices, providing a compact and efficient layout for high-density applications.

Pinout

The MT53D512M16D1DS-046 WT:D is a 512Mb (64MB) DDR3 SDRAM memory chip, specifically designed for mobile applications. It has a pin count of 96.
The primary functions of this memory device include:
1. Data Storage: It stores data temporarily for quick access by the device's processor.
2. Memory Interface: Supports a DDR3 interface with a data bus width of 16 bits.
3. Power Management: Designed for low power consumption, ideal for mobile devices.
4. High-Speed Access: Offers high-speed data transfer rates, supporting various data rates up to 1600 MT/s.
This memory chip is typically used in smartphones, tablets, and other portable electronics.

Manufacturer

The manufacturer of the MT53D512M16D1DS-046 WT:D is Micron Technology, Inc. Micron is a leading global provider of advanced semiconductor solutions, specializing in memory and storage technologies, including DRAM, NAND flash memory, and NOR flash memory. The company serves various markets, including computing, mobile, automotive, and industrial applications. Founded in 1978 and headquartered in Boise, Idaho, Micron is known for its innovation in the memory industry and its commitment to developing high-performance memory products that support emerging technologies.

Application

The MT53D512M16D1DS-046 WT:D is a DRAM memory chip used in applications such as smartphones, tablets, digital cameras, and other portable devices requiring high-performance memory. Its low power consumption and high density make it suitable for mobile computing, automotive systems, and IoT devices, where efficient memory usage is critical for performance and battery life.

Equivalent

The MT53D512M16D1DS-046 WT:D chip is a 512Mb DDR3 SDRAM memory chip. Equivalent products include:
1. Micron MT53D512M16D1DS-053 WT:D
2. Samsung K4B4G1646F-BCK0
3. Hynix H5TQ4G83CFR-PBA
Ensure compatibility with your specific application and check for exact specifications.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire