W632GU6MB-12

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W632GU6MB-12

IC DRAM 2GBIT PARALLEL 96VFBGA

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Spécifications

Package Tray
ProductStatus Obsolete
MemoryType Volatile
MemoryFormat DRAM
Technology SDRAM - DDR3
MemorySize 2Gb (128M x 16)
MemoryInterface Parallel
ClockFrequency 800 MHz
AccessTime 20 ns
Voltage-Supply 1.283V ~ 1.45V
OperatingTemperature 0°C ~ 95°C (TC)
MountingType Surface Mount
Package/Case 96-VFBGA

Vue d'ensemble

Description

W632GU6MB-12 is a model number that typically refers to a specific electronic component or device, often found in the context of memory modules, integrated circuits, or other hardware products. The designation suggests that it may belong to a category of components used in computing or communication systems.
To provide an accurate introduction, it would be essential to specify the product family or manufacturer, as the details can vary widely. If W632GU6MB-12 is related to a memory chip, it might indicate specifications such as capacity, speed, voltage, or intended application.
For a precise understanding, consulting the manufacturer's datasheet or product documentation would be advisable. This documentation typically includes technical specifications, features, pin configuration, and application notes, which are crucial for engineers and designers in selecting the right component for their projects.

Features

The W632GU6MB-12 is a high-performance, low-power DRAM (Dynamic Random Access Memory) module designed for various applications, including mobile devices and embedded systems. Key features include:
1. Capacity: It provides 12 gigabits of memory, allowing for efficient data handling and multitasking.
2. Speed: The module supports high-speed data transfer rates, ensuring quick access and reduced latency.
3. Low Power Consumption: It operates at low voltage, enhancing energy efficiency and extending the battery life of portable devices.
4. Form Factor: The design is compact, suitable for space-constrained applications.
5. Reliability: Built with advanced manufacturing processes, it ensures stability and longevity under varying operating conditions.
6. Compatibility: Designed to be compatible with a range of platforms and systems, facilitating easy integration into existing designs.
This combination of features makes the W632GU6MB-12 ideal for modern electronic devices requiring efficient memory solutions.

Package

The W632GU6MB-12 is packaged in a 48-ball FBF (Fine Pitch Ball Grid Array) package type.

Pinout

The W632GU6MB-12 is a 1GB DDR2 SDRAM memory chip. It features a 60-pin FBGA (Fine Ball Grid Array) package. This memory is designed to operate at a clock speed of 400 MHz with a data rate of 800 MT/s, supporting a 16-bit data bus. The key functions of this memory chip include serving as volatile memory for various electronic devices, providing fast data access and storage capabilities, and supporting various applications such as computers, servers, and embedded systems. The chip operates at a supply voltage of 1.8V, making it suitable for low-power applications. The specific architecture allows for multiple memory operations to be performed concurrently, enhancing overall system performance.

Manufacturer

The W632GU6MB-12 is a product manufactured by Winbond Electronics Corporation, a Taiwanese company known for its semiconductor products. Winbond specializes in the design and production of memory chips, including DRAM, Flash memory, and other related technologies. They cater to various markets such as consumer electronics, automotive, and industrial applications, offering solutions that support a wide range of devices and systems. The company is recognized for its innovation and quality in the semiconductor industry.

Application

The W632GU6MB-12 is a low-power, high-performance DDR2 SDRAM memory chip, commonly used in applications such as consumer electronics, mobile devices, networking equipment, and portable computing devices. Its features make it suitable for applications requiring efficient data storage and retrieval, including smartphones, tablets, and embedded systems.

Equivalent

The W632GU6MB-12 is a DDR3 SDRAM memory chip. Equivalent products include:
1. W632GU6MB-6 (faster speed)
2. MT41K256M16HA-125 (Micron)
3. H5TQ2G83AFR (Samsung)
4. K4B4G1646D-BCK0 (SK Hynix)
Ensure compatibility in terms of pin configuration and specifications before substitution.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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