UCC27714DR

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UCC27714DR

IC GATE DRVR HALF-BRIDGE 14SOIC

  • Fabricant
  • Mfr. Partie #UCC27714DR
  • Paquet SOIC (D)-14
  • Fiche de données
  • En stock4140

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
DrivenConfiguration Half-Bridge
ChannelType Independent
NumberofDrivers 2
GateType IGBT, N-Channel MOSFET
Voltage-Supply 10V ~ 18V
LogicVoltage-VILVIH 1.2V, 2.7V
Current-PeakOutput(SourceSink) 4A, 4A
InputType Non-Inverting
HighSideVoltage-Max(Bootstrap) 600 V
Rise/FallTime(Typ) 15ns, 15ns
OperatingTemperature -40°C ~ 125°C (TJ)
MountingType Surface Mount
Package/Case 14-SOIC (0.154, 3.90mm Width)

Vue d'ensemble

Description

The UCC27714DR is a high-performance gate driver designed by Texas Instruments for driving power MOSFETs and IGBTs. It is particularly suited for applications requiring high-speed and efficient switching. The device features a 600 V high-side/low-side driver with a 4 A source and a 4 A sink current capability, making it ideal for various power conversion applications like motor drives, solar inverters, and UPS systems.
Key features include a wide operating voltage range from 10 V to 20 V, excellent propagation delay matching, and the ability to work at high switching frequencies. The UCC27714DR also incorporates protection features such as undervoltage lockout for both high-side and low-side drivers, ensuring reliable operation under varying voltage conditions. The device is housed in a SOIC-14 package, which provides a compact solution for space-constrained designs.
Overall, the UCC27714DR offers robust performance and reliability, making it a versatile choice for engineers looking to optimize their power stage designs in high-efficiency applications.

Features

The UCC27714DR is a high-performance gate driver from Texas Instruments designed for driving high-side and low-side MOSFETs or IGBTs. Key features include:
1. High Voltage Capability: The device supports a maximum VDD of 20V, suitable for a wide range of power applications.
2. High Current Drive: It provides a 4A peak source and 4A peak sink capability, ensuring robust driving for large power switches.
3. Level-Shifting: The UCC27714DR includes integrated level-shifting, allowing it to drive high-side and low-side transistors effectively.
4. Programmable Dead Time: It offers adjustable dead time to prevent shoot-through, enhancing reliability in switching operations.
5. Propagation Delay: The device exhibits low propagation delay, improving the efficiency and performance of the power stage.
6. Undervoltage Lockout (UVLO): Both high-side and low-side drivers have UVLO protection, safeguarding against low supply voltage conditions.
7. Thermal Performance: The device is available in a thermally enhanced SOIC-14 package that supports high-temperature operations.
8. Wide Temperature Range: Operates across a wide temperature range, ensuring functionality in diverse environmental conditions.
These features make the UCC27714DR suitable for various applications including motor drives, industrial power supplies, and inverter systems.

Package

The UCC27714DR is a high-side/low-side gate driver IC from Texas Instruments. It typically comes in an 8-pin SOIC (Small Outline Integrated Circuit) package type, specifically noted as "D" in the part number, with "R" indicating it is supplied in a reel for tape-and-reel packaging suitable for automated assembly.

Pinout

The UCC27714DR is a high-side and low-side gate driver IC produced by Texas Instruments. It is designed to drive MOSFETs and IGBTs in half-bridge and full-bridge configurations. The IC comes in an 8-pin SOIC package. Here are the pin functions:
1. VDD: Supply input voltage for the IC, powering the low-side circuit.
2. HB: High-side floating supply voltage, used for powering the high-side driver.
3. HO: High-side gate drive output, which connects to the gate of the high-side MOSFET/IGBT.
4. HS: High-side source connection, usually connected to the source of the high-side MOSFET or the emitter of the high-side IGBT.
5. HI: High-side input signal, controlling the high-side gate drive output.
6. LI: Low-side input signal, controlling the low-side gate drive output.
7. LO: Low-side gate drive output, which connects to the gate of the low-side MOSFET/IGBT.
8. COM: Common ground reference for the IC and the low-side driver.
This configuration allows the UCC27714DR to effectively drive power transistors in various switching applications, providing necessary isolation and level shifting for high-side and low-side control signals.

Manufacturer

The UCC27714DR is manufactured by Texas Instruments (TI). Texas Instruments is a global technology company that designs and manufactures semiconductors and various integrated circuits, which are used in a wide range of electronics applications. TI's focus is on developing analog chips and embedded processors, playing a significant role in the electronics industry by providing components that are essential for powering electronic devices, managing power, and enabling communication and data processing. The company serves various sectors, including industrial, automotive, personal electronics, and communications equipment. TI is known for its innovation and extensive experience in semiconductor manufacturing, contributing to advancements in technology and electronics globally.

Application

The UCC27714DR is a high-side/low-side gate driver used in power electronics applications. It is suitable for driving power MOSFETs and IGBTs in various applications such as:
1. Power Supply Units (PSUs)
2. Motor Drives
3. DC-DC Converters
4. Uninterruptible Power Supplies (UPS)
5. Industrial Inverters
6. Renewable Energy Systems (e.g., solar inverters)
Its features such as high switching speed, efficient power management, and robust protection make it ideal for these demanding applications.

Equivalent

The UCC27714DR is a half-bridge gate driver IC from Texas Instruments. Equivalent products include:
1. IRS2113 by Infineon Technologies
2. ADuM3223 by Analog Devices
3. FAN7393 by ON Semiconductor
4. 2ED2184S06F by Infineon Technologies
When choosing a substitute, ensure compatibility in terms of electrical characteristics, package, and application requirements.

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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