TPH2R306NH

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TPH2R306NH

Toshiba

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  • Mfr. Partie #TPH2R306NH
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  • Fiche de données
  • En stock5798

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Spécifications

Vue d'ensemble

Description

The TPH2R306NH is a type of power semiconductor device, specifically a Silicon Carbide (SiC) MOSFET, used in high-efficiency power applications. It is designed for high voltage and high temperature operations, making it suitable for applications such as electric vehicles, renewable energy systems, and industrial power supplies. This device offers benefits including low switching losses, high thermal conductivity, and excellent reliability under harsh conditions.
Key features of the TPH2R306NH include a high breakdown voltage, fast switching capabilities, and low on-resistance, which contribute to improved overall system efficiency. The device is typically packaged in a robust configuration that facilitates easy integration into various power electronics circuits.
Due to its performance characteristics, the TPH2R306NH is increasingly favored in applications where efficiency and thermal management are critical, helping to drive advancements in modern power systems.

Features

The TPH2R306NH is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, allowing it to handle significant voltage levels in various circuits.
2. Current Rating: It supports a continuous drain current (I_D) of up to 60A, making it suitable for applications requiring high current handling.
3. Low On-Resistance: With an on-resistance (R_DS(on)) of 6 mΩ at V_GS = 10V, it ensures low power loss and improved efficiency during operation.
4. Fast Switching Speed: The device is optimized for fast switching, which enhances performance in high-frequency applications.
5. Thermal Performance: It features a robust thermal performance, with a maximum junction temperature of 175°C, suitable for demanding environments.
6. Package Type: Typically available in a TO-220 or similar package for efficient heat dissipation.
Overall, the TPH2R306NH is ideal for applications in power management, motor control, and switching power supplies.

Package

The TPH2R306NH is packaged in a TO-220 form factor, which is commonly used for high-power applications. This package type provides good thermal performance and allows for easy heat dissipation.

Pinout

The TPH2R306NH is a power MOSFET from Texas Instruments. It features a TO-220 package with a pin count of three. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET's operation, turning it on and off.
2. Drain (D): This pin connects to the load and provides the output for the current flow when the device is in the ON state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply, completing the circuit.
The TPH2R306NH is designed for high-efficiency applications, including power management and switching power supplies.

Manufacturer

The TPH2R306NH is manufactured by Texas Instruments (TI), a prominent American technology company. Texas Instruments specializes in designing and manufacturing semiconductors and various integrated circuits, which are used in a wide array of electronic devices. The company is well-known for its innovations in analog electronics, embedded processors, and digital signal processing technologies. Founded in 1930, TI serves multiple industries, including automotive, industrial, communications, and consumer electronics, making it a key player in the global electronics market.

Application

TPH2R306NH is a high-performance N-channel MOSFET used in various applications, including power management, DC-DC converters, and motor drives. Its low on-resistance and high-speed switching capabilities make it suitable for use in consumer electronics, automotive systems, and industrial equipment. Additionally, it is employed in battery management systems and renewable energy applications for efficient power conversion and regulation.

Equivalent

The TPH2R306NH chip is a power MOSFET used for various applications. Equivalent products include the Infineon BSC014N06NS3, the STMicroelectronics STP16NF06, and the Vishay SiHG47N06. Always verify specifications such as voltage, current ratings, and package type when selecting an equivalent.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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