TH58NVG3S0HTAI0

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TH58NVG3S0HTAI0

IC FLASH 8GBIT PARALLEL 48TSOP I

  • Fabricant
  • Mfr. Partie #TH58NVG3S0HTAI0
  • Paquet 48-TFSOP
  • Fiche de données
  • En stock2615

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Spécifications

Package Tray
ProductStatus Active
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NAND (SLC)
MemorySize 8Gb (1G x 8)
MemoryInterface Parallel
WriteCycleTime-WordPage 25ns
AccessTime 25 ns
Voltage-Supply 2.7V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 48-TFSOP (0.724, 18.40mm Width)

Vue d'ensemble

Description

TH58NVG3S0HTAI0 is a NAND flash memory chip produced by Toshiba. It is designed for various applications, including smartphones, tablets, and other consumer electronics. This NAND flash memory features a high density, enabling the storage of large amounts of data in a compact form factor. The device utilizes advanced 3D NAND technology, which stacks memory cells vertically to increase storage capacity and improve performance while reducing the physical footprint. It offers benefits such as faster read and write speeds, enhanced durability, and lower power consumption compared to traditional 2D NAND. The TH58NVG3S0HTAI0 is part of Toshiba's efforts to provide reliable, high-performance storage solutions to meet the growing demands of modern digital applications.

Features

The TH58NVG3S0HTAI0 is a NAND flash memory chip produced by Toshiba. Key features include:
1. Density: It typically offers high storage capacities, often ranging from 1GB to 16GB.
2. Interface: Utilizes the ONFI (Open NAND Flash Interface) standard for compatibility and ease of integration.
3. Performance: Supports high-speed read and write operations, enhancing data transfer rates, which is crucial for applications like smartphones and tablets.
4. Endurance: Designed for high endurance and reliability, suitable for demanding data storage applications.
5. Power Efficiency: Operates with low power consumption, making it ideal for battery-operated devices.
6. Architecture: Utilizes a multi-level cell (MLC) or triple-level cell (TLC) architecture, maximizing storage density.
7. Applications: Commonly used in consumer electronics, automotive systems, and industrial applications.
This chip is well-suited for various applications requiring reliable, high-capacity data storage solutions.

Package

The TH58NVG3S0HTAI0 is a NAND flash memory chip from Toshiba, typically packaged in a TSOP (Thin Small Outline Package) or similar surface-mount form factor. This packaging allows for efficient integration into various electronic devices.

Pinout

The TH58NVG3S0HTAI0 is a NAND flash memory device manufactured by Toshiba. It typically features a 48-pin TSOP (Thin Small Outline Package) configuration.
The main functions of the TH58NVG3S0HTAI0 include:
1. Data Storage: It serves as non-volatile memory, allowing for data storage without power.
2. Read/Write Operations: Supports multiple read and write operations, enabling data retrieval and storage.
3. Flash Management: Includes built-in error correction code (ECC) and wear leveling for enhanced reliability and endurance.
4. Interface: Utilizes a standard NAND flash interface for connectivity to host systems.
This device is commonly used in consumer electronics, mobile devices, and embedded systems due to its efficiency and performance. For specific pin functions, refer to the manufacturer's datasheet, as it provides detailed information on each pin's role.

Manufacturer

The manufacturer of the TH58NVG3S0HTAI0 is Toshiba. Toshiba is a multinational conglomerate based in Japan, primarily known for its diversified products and services in electronics, including semiconductors, storage devices, and consumer electronics. Founded in 1875, Toshiba has a long history in technology and innovation, and it operates in various sectors such as information technology, social infrastructure, and energy systems. The TH58NVG3S0HTAI0 is a NAND flash memory product, illustrating Toshiba’s role as a significant player in the semiconductor market.

Application

The TH58NVG3S0HTAI0 is a NAND flash memory device primarily used in applications such as smartphones, tablets, and other portable electronics for data storage. It is also utilized in automotive electronics, industrial systems, and consumer electronics for firmware storage and data logging. Its high-speed access and reliability make it suitable for embedded systems and IoT devices as well.

Equivalent

The TH58NVG3S0HTAI0 chip, a 3D NAND Flash memory from Toshiba, is equivalent to products such as the Micron MT29F, Samsung KBG4AZA512G, and SK Hynix H27QDA8G5M. These alternatives share similar specifications in terms of NAND technology and usage in consumer electronics, SSDs, and mobile devices. Always verify specific compatibility based on application requirements.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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2. Carte de crédit/débit

3. Transfert bancaire

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