TC58NVG2S3ETA00

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TC58NVG2S3ETA00

NAND Flash 3.3V 4Gb 43nm SLC NAND (EEPROM)

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  • Mfr. Partie #TC58NVG2S3ETA00
  • Paquet
  • Fiche de données
  • En stock29295

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Spécifications

Packaging Tray
Standard Pack Qty 96

Vue d'ensemble

Description

The TC58NVG2S3ETA00 is a NAND flash memory chip developed by Toshiba. It is designed for high-performance applications, offering a combination of high density, fast read/write speeds, and reliability. This chip typically features a 3D NAND architecture, enabling higher storage capacity in a smaller physical footprint, which is ideal for mobile devices, SSDs, and consumer electronics.
Key specifications include a storage capacity of 128GB, support for various interfaces such as ONFI and toggle-mode, and advanced error correction technologies to enhance data integrity and longevity. The TC58NVG2S3ETA00 is particularly suited for applications that require efficient data storage and quick access, making it a popular choice in modern computing solutions.
Its design focuses on power efficiency, ensuring low energy consumption, which is crucial for battery-operated devices. Overall, the TC58NVG2S3ETA00 represents a significant advancement in NAND flash technology, catering to the growing demands for storage solutions in various digital applications.

Features

The TC58NVG2S3ETA00 is a NAND flash memory chip manufactured by Toshiba, designed for high-performance storage applications. Key features include:
1. Type: 3D NAND flash technology, which allows for higher density and improved performance.
2. Capacity: Typically available in capacities around 128GB to 1TB.
3. Interface: Supports a Serial Peripheral Interface (SPI) or ONFI compliant NAND interface for easy integration.
4. Read/Write Performance: Enhanced read and write speeds, making it suitable for various applications, including mobile devices, consumer electronics, and enterprise solutions.
5. Endurance: Offers high endurance ratings, suitable for write-intensive applications.
6. Data Retention: Provides reliable data retention, ensuring data integrity over extended periods.
7. Power Efficiency: Designed for low power consumption, which is beneficial for battery-operated devices.
Overall, the TC58NVG2S3ETA00 combines high performance, efficiency, and reliability, making it suitable for a wide range of modern electronic applications.

Package

The TC58NVG2S3ETA00 is a 3D NAND Flash memory device packaged in a BGA (Ball Grid Array) format. It features a compact design suitable for various applications, including consumer electronics and mobile devices.

Pinout

The TC58NVG2S3ETA00 is a 128 Gb NAND flash memory device produced by Toshiba. It features a pin count of 48 pins in a TSOP (Thin Small Outline Package) configuration.
The primary functions of this device include:
1. Data Storage: It provides non-volatile storage for data, retaining information without power.
2. Serial Interface: Supports a serial interface for communication, allowing integration into various applications.
3. Memory Management: It incorporates advanced memory management features, including wear leveling and bad block management to enhance reliability and performance.
4. Read/Write Operations: Capable of high-speed read and write operations, making it suitable for applications such as smartphones, tablets, and other consumer electronics.
This device is typically used in applications requiring high-density and efficient storage solutions.

Manufacturer

The TC58NVG2S3ETA00 is manufactured by Toshiba Memory Corporation, which is now known as Kioxia Corporation. Kioxia is a leading manufacturer of flash memory and solid-state drives (SSDs). The company specializes in NAND flash memory technology and provides storage solutions for various applications, including consumer electronics, enterprise storage, and mobile devices. Kioxia was established as a standalone company in 2017 following the spin-off of Toshiba's memory business. As a pioneer in the memory industry, Kioxia focuses on innovation and advanced technologies to meet the growing demand for data storage and processing in today's digital world.

Application

The TC58NVG2S3ETA00 is a NAND flash memory device primarily used in consumer electronics, mobile devices, solid-state drives (SSDs), and automotive applications. It is suitable for data storage, application storage in smartphones and tablets, and as a boot device in various computing systems, providing high-speed data transfer and reliable performance in both read and write operations.

Equivalent

The TC58NVG2S3ETA00 chip is a NAND flash memory device. Equivalent products include:
1. Micron MT29F series (e.g., MT29F128G08CFAAWP)
2. Samsung K9GAG08U0M series
3. SK Hynix H26M series
4. Western Digital (SanDisk) 19nm NAND products
Always verify specifications, compatibility, and application requirements before substitution.

Expédition

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offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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1. PayPal

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3. Transfert bancaire