TC58CVG2S0HRAIG

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TC58CVG2S0HRAIG

IC FLASH 4GBIT SPI 104MHZ 8WSON

  • Fabricant
  • Mfr. Partie #TC58CVG2S0HRAIG
  • Paquet WSON-8
  • Fiche de données
  • En stock3098

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Spécifications

Package Tray
ProductStatus Obsolete
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NAND (SLC)
MemorySize 4Gb (512M x 8)
MemoryInterface SPI
ClockFrequency 104 MHz
AccessTime 280 µs
Voltage-Supply 2.7V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 8-WDFN Exposed Pad

Vue d'ensemble

Description

The TC58CVG2S0HRAIG is a NAND flash memory chip produced by Toshiba, designed for use in a variety of applications including smartphones, tablets, and other consumer electronics. It features a 3D NAND architecture, which allows for increased storage density and improved performance compared to traditional 2D NAND.
This chip typically offers high read and write speeds, efficient power consumption, and enhanced reliability, making it suitable for high-performance applications. It supports advanced error correction and management features, ensuring data integrity and durability over time.
The TC58CVG2S0HRAIG is part of Toshiba's effort to provide scalable memory solutions that meet the growing demands for storage in modern devices, contributing to faster boot times, smoother multitasking, and overall improved user experiences. Its versatility and efficiency position it well for integration into a wide range of digital products.

Features

The TC58CVG2S0HRAIG is a NAND flash memory chip developed by Toshiba. It features a 3D NAND architecture, specifically utilizing BiCS FLASH technology, which enhances storage density and performance. This chip typically offers a high capacity, often in the range of 128GB to several terabytes, making it suitable for a variety of applications, including smartphones, tablets, and SSDs.
Key features include:
1. High Performance: Fast read and write speeds, beneficial for data-intensive applications.
2. Low Power Consumption: Designed to operate efficiently, extending battery life in portable devices.
3. Durability: Enhanced endurance and reliability due to its 3D structure, which reduces the impact of wear.
4. Scalability: Supports integration into various devices and systems, from consumer electronics to enterprise storage solutions.
Overall, the TC58CVG2S0HRAIG combines high capacity, efficiency, and reliability, making it a versatile choice for modern storage needs.

Package

The TC58CVG2S0HRAIG is packaged in a BGA (Ball Grid Array) format, specifically a 48-ball configuration. This type of package is designed for surface mounting on circuit boards, providing efficient thermal and electrical performance.

Pinout

The TC58CVG2S0HRAIG is a NAND flash memory device produced by Toshiba. It features a total of 48 pins. The primary function of this device is to provide non-volatile storage, specifically for applications requiring high density and performance, such as smartphones, tablets, and solid-state drives (SSDs).
Key functionalities of the TC58CVG2S0HRAIG include data storage, read and write operations, and management of memory cells, which are organized into pages and blocks. It also incorporates features for error correction, wear leveling, and power management to enhance the reliability and longevity of the stored data. This NAND flash is part of the 3D NAND family, offering improved performance and density compared to traditional planar NAND solutions.

Manufacturer

The TC58CVG2S0HRAIG is manufactured by Toshiba Memory Corporation, which is now known as Kioxia Holdings Corporation. Kioxia is a leading global provider of flash memory and solid-state drives (SSDs). The company specializes in NAND flash memory and related storage solutions for a variety of applications, including consumer electronics, enterprise systems, and data centers. Established as a spinoff from Toshiba's memory business, Kioxia focuses on innovation in memory technology, aiming to enhance data storage solutions worldwide.

Application

The TC58CVG2S0HRAIG is a NAND flash memory device used primarily in consumer electronics, such as smartphones, tablets, and laptops. It is also applicable in automotive systems for data storage, industrial applications for embedded systems, and as storage solutions in IoT devices. Its high performance and reliability make it suitable for a wide range of applications requiring efficient data storage and retrieval.

Equivalent

The TC58CVG2S0HRAIG is a NAND flash memory chip. Equivalent products include the Toshiba TC58CVG2S0HRAIG, Micron MT29F64G08CBAAA, Samsung K9GAG08U0M, and SK Hynix H26M31001G. Be sure to check specifications such as capacity, interface, and organization for compatibility.

Expédition

Méthodes d'expéditionNous

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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