TC58CVG1S3HRAIJ

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TC58CVG1S3HRAIJ

IC FLASH 2GBIT SPI 133MHZ 8WSON

  • Fabricant
  • Mfr. Partie #TC58CVG1S3HRAIJ
  • Paquet WSON-8
  • Fiche de données
  • En stock2755

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Spécifications

Package Tray
ProductStatus Active
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NAND (SLC)
MemorySize 2Gb (256M x 8)
MemoryInterface SPI
ClockFrequency 133 MHz
AccessTime 180 µs
Voltage-Supply 2.7V ~ 3.6V
OperatingTemperature -40°C ~ 85°C
MountingType Surface Mount
Package/Case 8-WDFN Exposed Pad

Vue d'ensemble

Description

The TC58CVG1S3HRAIJ is a type of NAND flash memory chip designed by Toshiba (now Kioxia). It belongs to the 3D NAND family, which stacks memory cells vertically to increase storage density and improve performance. This particular model features a capacity of 64 gigabits (8 gigabytes) and is built on advanced process technologies to enhance endurance and reliability.
Key characteristics include high-speed data transfer rates, efficient power consumption, and support for various data storage applications—from consumer electronics to enterprise solutions. The TC58CVG1S3HRAIJ is particularly suited for mobile devices, solid-state drives (SSDs), and other storage solutions requiring high performance and efficiency.
Overall, it represents a significant advancement in flash memory technology, aimed at meeting the growing demands for faster and more reliable data storage in modern computing environments.

Features

The TC58CVG1S3HRAIJ is a NAND flash memory chip produced by Toshiba, featuring the following key attributes:
1. Type: It is a 3D NAND flash memory device, which enhances storage density and performance.
2. Storage Capacity: Typically available in various capacities, it allows for significant data storage, often ranging from several gigabytes to terabytes.
3. Interface: The chip utilizes a high-speed interface, such as ONFI (Open NAND Flash Interface) or similar, to ensure fast data transfer rates.
4. Endurance: Designed with wear leveling and error correction capabilities to improve longevity and reliability under heavy usage.
5. Applications: Suitable for a variety of applications, including consumer electronics, mobile devices, SSDs, and enterprise storage solutions.
6. Power Efficiency: Optimized for low power consumption, making it ideal for battery-operated devices.
This combination of features makes the TC58CVG1S3HRAIJ a versatile choice for modern storage solutions.

Package

The TC58CVG1S3HRAIJ is a NAND flash memory chip typically packaged in a BGA (Ball Grid Array) format. This packaging allows for efficient heat dissipation and high-density mounting on circuit boards, making it suitable for applications in mobile devices and other electronics.

Pinout

The TC58CVG1S3HRAIJ is a NAND flash memory device with a total of 48 pins. It is designed for use in a variety of storage applications, providing high-density memory solutions.
The key functions of the pins include:
1. Data Input/Output (DQ0-DQ7): These pins are used for data transfer, allowing for 8-bit wide data communication.
2. Command (CMD): This pin receives commands for memory operations.
3. Write Protect (WP): This pin is used to enable or disable write protection on the device.
4. Chip Enable (CE): This pin activates the memory chip.
5. Read Enable (RE): This pin is used to enable data reading.
6. Write Enable (WE): This pin facilitates data writing operations.
7. Address Pins (A0-Ax): These pins are used to select the address for data access.
8. Power Supply (Vcc, Vss): These provide the necessary power to the device.
Overall, the TC58CVG1S3HRAIJ is utilized for high-performance data storage solutions in various electronic devices.

Manufacturer

The TC58CVG1S3HRAIJ is manufactured by Toshiba Corporation, a Japanese multinational conglomerate. Toshiba operates in various sectors, including electronics, semiconductors, storage solutions, power systems, and social infrastructure. The company is well-known for its innovation in technology and has a significant presence in the semiconductor industry, particularly in NAND flash memory and other storage devices. Toshiba's products cater to a wide range of applications, including consumer electronics, data centers, and automotive systems. The TC58CVG1S3HRAIJ is a NAND flash memory chip, part of Toshiba's extensive line of memory solutions designed for high-performance computing and storage applications.

Application

The TC58CVG1S3HRAIJ is a NAND flash memory chip primarily used in consumer electronics, such as smartphones, tablets, and laptops. It serves applications in data storage, including solid-state drives (SSDs) and embedded systems. Additionally, it is utilized in automotive applications for infotainment and advanced driver-assistance systems (ADAS), as well as in IoT devices for efficient data management.

Equivalent

The TC58CVG1S3HRAIJ is a NAND flash memory chip from Toshiba. Equivalent products typically include similar NAND flash chips from other manufacturers like Micron (e.g., Micron 32L NAND), Samsung (e.g., Samsung K9GAG08U0M), and SK Hynix (e.g., H26M31001G). When looking for equivalents, ensure compatibility in specifications like capacity, interface, and voltage. Always consult the datasheets for precise comparisons.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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