TC58CVG0S3HRAIG

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TC58CVG0S3HRAIG

IC FLASH 1GBIT SPI 104MHZ 8WSON

  • Fabricant
  • Mfr. Partie #TC58CVG0S3HRAIG
  • Paquet 8-WDFNExposedPad
  • Fiche de données
  • En stock5249

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Spécifications

Package Tray
ProductStatus Obsolete
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NAND (SLC)
MemorySize 1Gb (128M x 8)
MemoryInterface SPI
ClockFrequency 104 MHz
AccessTime 155 µs
Voltage-Supply 2.7V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 8-WDFN Exposed Pad

Vue d'ensemble

Description

The TC58CVG0S3HRAIG is a NAND flash memory chip developed by Toshiba. It is part of the company's 3D NAND technology, which stacks memory cells vertically to enhance storage density and performance while reducing power consumption. This specific model typically offers high capacity, fast read/write speeds, and improved reliability, making it suitable for various applications, including consumer electronics, mobile devices, and enterprise storage solutions.
Key features often include multi-level cell (MLC) architecture, advanced error correction capabilities, and support for high-speed interfaces like ONFI or Toggle mode. The TC58CVG0S3HRAIG is designed to meet the demands of modern data-intensive applications, offering a balance of performance, efficiency, and longevity.
Overall, its innovative design and technology position it well in the competitive NAND flash market, catering to the needs of both individual consumers and enterprise users seeking high-performance storage solutions.

Features

The TC58CVG0S3HRAIG is a high-performance NAND flash memory chip from Toshiba. Key features include:
1. Memory Type: 3D TLC NAND (Triple-Level Cell) technology, which allows for higher density and improved performance compared to traditional planar NAND.

2. Interface: SATA (Serial Advanced Technology Attachment) interface, facilitating easy integration into various devices including SSDs.
3. Capacity: Typically available in varying capacities, supporting applications that require significant storage space.
4. Endurance: Enhanced endurance characteristics, making it suitable for enterprise and data center applications.
5. Performance: Offers high read and write speeds, optimizing data transfer rates for demanding applications.
6. Power Efficiency: Designed for low power consumption, which is beneficial for portable devices and helps extend battery life.
7. Reliability: Features integrated error correction and wear leveling technologies to ensure data integrity and longevity.
These features make the TC58CVG0S3HRAIG ideal for a range of applications, including consumer electronics, enterprise storage solutions, and mobile devices.

Package

The TC58CVG0S3HRAIG is packaged in a BGA (Ball Grid Array) format, specifically a 48-ball configuration. This type of packaging provides a compact footprint and efficient thermal performance for the NAND flash memory chip.

Pinout

The TC58CVG0S3HRAIG is a NAND flash memory device with a total of 48 pins. It is designed for high-capacity storage applications, typically used in consumer electronics, automotive, and industrial devices.
The main functions of the pins include power supply (VCC and VSS), input/output data pins (I/O0 to I/O7), command pins for control (such as CE for chip enable, RE for read enable, WE for write enable), and additional pins for various purposes, including status signals and various control functions.
This specific NAND flash memory features advanced capabilities such as multi-level cell (MLC) storage and is known for its high performance and reliability in data storage applications.

Manufacturer

The TC58CVG0S3HRAIG is manufactured by Toshiba Corporation, a multinational company based in Japan. Toshiba is renowned for its diverse range of products and services, including semiconductors, consumer electronics, and information technology. The TC58CVG0S3HRAIG is a type of NAND flash memory, specifically designed for use in storage applications such as SSDs (Solid State Drives) and other electronic devices. Toshiba is a key player in the semiconductor industry, known for its innovation and technology advancements in memory solutions.

Application

TC58CVG0S3HRAIG is a NAND flash memory chip commonly used in various applications, including smartphones, tablets, and other consumer electronics for data storage. It also finds use in automotive systems, industrial devices, and embedded systems where reliable and high-capacity memory solutions are needed. Additionally, it supports applications in data centers and enterprise storage solutions, enhancing performance and efficiency in data management.

Equivalent

The TC58CVG0S3HRAIG chip is a NAND flash memory device. Equivalent products may include other NAND flash memories from manufacturers like Samsung (K9GAG08U0M), Micron (MT29F1G01AB), and SK Hynix (H27UCG8T2B). It's essential to check specifications such as density, interface, and package type to ensure compatibility. Always refer to the manufacturer's datasheets for detailed comparisons.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire