TC58BVG1S3HTA00

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TC58BVG1S3HTA00

IC FLASH 2GBIT PARALLEL 48TSOP I

  • Fabricant
  • Mfr. Partie #TC58BVG1S3HTA00
  • Paquet TSOP-48
  • Fiche de données
  • En stock4395

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Spécifications

Package Tray
Series Benand™
ProductStatus Active
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NAND (SLC)
MemorySize 2Gb (256M x 8)
MemoryInterface Parallel
WriteCycleTime-WordPage 25ns
AccessTime 25 ns
Voltage-Supply 2.7V ~ 3.6V
OperatingTemperature 0°C ~ 70°C (TA)
MountingType Surface Mount
Package/Case 48-TFSOP (0.724, 18.40mm Width)

Vue d'ensemble

Description

The TC58BVG1S3HTA00 is a NAND flash memory device manufactured by Toshiba. It is designed for high-performance applications, particularly in consumer electronics, mobile devices, and enterprise storage solutions. This 3D NAND flash utilizes advanced 3D stacking technology, allowing for increased storage capacity and improved performance over traditional 2D NAND.
Key features include high write and read speeds, enhanced endurance, and efficiency in power consumption, making it suitable for demanding workloads. The device supports various interfaces, including the latest standards for seamless integration into modern systems. With its robust architecture, it offers reliable data retention and durability, catering to the growing need for efficient storage in an increasingly data-driven world.
Overall, the TC58BVG1S3HTA00 stands out as a competitive option for those seeking reliable and high-capacity storage solutions.

Features

The TC58BVG1S3HTA00 is a 3D NAND flash memory device produced by Toshiba (now Kioxia). Key features include:
1. Storage Capacity: It offers high capacity options, commonly ranging from 256GB to several terabytes.
2. NAND Type: Utilizes 3D TLC (Triple-Level Cell) NAND technology, enhancing density and performance.
3. Interface: Supports a SATA III interface, allowing for easy integration into various applications.
4. Performance: Provides high-speed data transfer rates, typically up to 550 MB/s for reads and 500 MB/s for writes, depending on the model.
5. Endurance: Designed for high endurance, suitable for client and enterprise applications.
6. Low Power Consumption: Offers energy-efficient operation, making it ideal for mobile and embedded devices.
7. Reliability Features: Includes advanced error correction (ECC) and wear leveling to ensure data integrity and longevity.
This combination of features makes the TC58BVG1S3HTA00 suitable for a variety of applications, including SSDs, mobile devices, and industrial solutions.

Package

The TC58BVG1S3HTA00 is packaged in a 48-pin LFBGA (Low Profile Ball Grid Array) format. This package type is designed for space efficiency and thermal performance, commonly used in high-density memory applications.

Pinout

The TC58BVG1S3HTA00 is a NAND flash memory device produced by Toshiba. It features a total pin count of 48 pins. This device is part of the 3D NAND flash memory family, designed for high-density storage applications, including mobile devices, solid-state drives (SSDs), and other consumer electronics.
The primary functions of the TC58BVG1S3HTA00 include data storage, data transfer, and memory management. It supports standard NAND flash memory interfaces, allowing for efficient read and write operations. Additionally, it incorporates features like wear leveling, error correction, and power management to enhance reliability and performance.
In summary, the TC58BVG1S3HTA00 has 48 pins and serves as a high-performance NAND flash memory solution suitable for various electronic applications.

Manufacturer

The TC58BVG1S3HTA00 is manufactured by Toshiba Memory Corporation, which is now known as Kioxia Corporation. Kioxia is a leading company in the flash memory and storage solutions industry. It specializes in NAND flash memory and solid-state drives (SSDs), providing advanced storage technologies for various applications, including consumer electronics, data centers, and enterprise solutions. Established as a spin-off from Toshiba's memory division, Kioxia has a strong focus on innovation and high-performance memory solutions, catering to the growing demands for faster and more reliable storage in an increasingly digital world.

Application

The TC58BVG1S3HTA00 is a 128GB NAND flash memory chip primarily used in consumer electronics, including smartphones, tablets, and laptops. It supports applications in data storage, mobile devices, automotive systems, and IoT devices due to its high-speed performance and reliability. Its compact form factor makes it suitable for various embedded systems and portable devices requiring efficient storage solutions.

Equivalent

The TC58BVG1S3HTA00 is a NAND flash memory chip. Equivalent products include the Micron MT29F1G08ABAEAWP, Samsung K9GAG08U0M, and SK Hynix H26M31001G4. These alternatives share similar specifications, such as capacity and organization, though variations in performance and features may exist. Always verify compatibility based on specific application requirements.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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