TC58BVG0S3HTAI0

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TC58BVG0S3HTAI0

IC FLASH 1GBIT PARALLEL 48TSOP I

  • Fabricant
  • Mfr. Partie #TC58BVG0S3HTAI0
  • Paquet TSOP48
  • Fiche de données
  • En stock6482

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Spécifications

Package Tray
Series Benand™
ProductStatus Active
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NAND (SLC)
MemorySize 1Gb (128M x 8)
MemoryInterface Parallel
WriteCycleTime-WordPage 25ns
AccessTime 25 ns
Voltage-Supply 2.7V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 48-TFSOP (0.724, 18.40mm Width)

Vue d'ensemble

Description

The TC58BVG0S3HTAI0 is a NAND flash memory chip manufactured by Toshiba. It is based on 3D NAND technology, which stacks memory cells vertically to increase storage density and improve performance. This particular model is designed for high-capacity storage solutions, commonly used in mobile devices, SSDs, and other consumer electronics.
Key features include fast read and write speeds, enhanced endurance, and lower power consumption compared to traditional 2D NAND flash. Its architecture enables higher data integrity and reliability, making it suitable for demanding applications. Additionally, the TC58BVG0S3HTAI0 supports advanced features like wear leveling and error correction, which are crucial for maintaining the longevity and performance of flash storage.
Overall, this NAND flash chip is an important component in modern digital devices, enabling faster data access and increased storage capabilities.

Features

The TC58BVG0S3HTAI0 is a NAND flash memory chip produced by Toshiba, designed for high-performance storage applications. Key features include:
1. Capacity: 128 gigabits (16 gigabytes) of storage.
2. Technology: Utilizes 3D NAND technology, which enhances density and performance.
3. Interface: Supports the Serial Peripheral Interface (SPI) for easy integration into various devices.
4. Performance: Offers high read and write speeds, making it suitable for demanding applications.
5. Endurance: Designed for a high number of program/erase cycles, ensuring longevity.
6. Power Efficiency: Operates at lower voltage levels, contributing to reduced power consumption.
7. Applications: Ideal for smartphones, tablets, SSDs, and other electronic devices requiring reliable storage solutions.
This combination of features makes the TC58BVG0S3HTAI0 a versatile choice for modern storage needs.

Package

The TC58BVG0S3HTAI0 is a NAND flash memory chip packaged in a 48-ball BGA (Ball Grid Array) format. This type of packaging provides a compact layout and efficient thermal performance, suitable for high-density applications.

Pinout

The TC58BVG0S3HTAI0 is a NAND flash memory device produced by Toshiba. It features a total pin count of 48 pins. The functions of these pins include power supply inputs, ground connections, data input/output, control signals, and other functions necessary for interfacing and operation.
Key pins include:
- VCC: Power supply for the device.
- GND: Ground connection.
- DQ0-DQ7: Data input/output lines for 8-bit data transfer.
- CE#: Chip Enable, used to activate the device.
- RE#: Read Enable, used to initiate read operations.
- WE#: Write Enable, used to initiate write operations.
- R/B: Ready/Busy output, indicating the status of the device.
These features make the TC58BVG0S3HTAI0 suitable for various applications in consumer electronics, computing, and mobile devices, providing high-density storage solutions.

Manufacturer

The TC58BVG0S3HTAI0 is manufactured by Toshiba Corporation, a multinational conglomerate based in Japan. Toshiba is known for its diverse range of products and services, including electronics, semiconductors, and storage solutions. Specifically, the TC58BVG0S3HTAI0 is a NAND flash memory chip, utilized in various applications such as smartphones, tablets, and other consumer electronics. Toshiba has a longstanding reputation in the semiconductor industry and has made significant contributions to memory technology, including the development of NAND flash memory.

Application

The TC58BVG0S3HTAI0 is a NAND flash memory chip primarily used in consumer electronics, such as smartphones, tablets, and laptops. Its applications also extend to solid-state drives (SSDs), automotive systems, and industrial equipment, where high-speed data processing, reliability, and efficient storage solutions are essential.

Equivalent

The TC58BVG0S3HTAI0 chip is a NAND flash memory device. Equivalent products may include similar NAND flash memory chips from brands like Samsung (K9GAG08U0E), Micron (MT29F4G08ABAE), and Toshiba’s own NAND series. When looking for equivalents, consider specifications such as density, package type, and interface to ensure compatibility. Always check the manufacturer's datasheets for precise comparisons.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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