SVF4N65F

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SVF4N65F

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Spécifications

Manufacturer Hangzhou Silan Microelectronics
Package TO-220F-3
Operating Temperature -55℃~+150℃
Current - Continuous Drain(Id) 4A
Pd - Power Dissipation 30W
Drain to Source Voltage 650V
RDS(on) 2.7Ω@10V,2A
Gate Threshold Voltage (Vgs(th)@Id) 4V
Type 1 N-channel
Gate Charge(Qg) 12.5nC@10V
Input Capacitance(Ciss@Vds) 430pF@25V
Reverse Transfer Capacitance (Crss@Vds) 4.1pF@25V

Vue d'ensemble

Description

The SVF4N65F is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-voltage applications. It features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) rating of up to 4A, making it suitable for use in power conversion, switching applications, and industrial control systems.
Key specifications include a low on-resistance (R_DS(on)), which minimizes power loss during operation, and a fast switching speed, enhancing efficiency in applications such as power supplies and motor drives. The SVF4N65F is housed in a TO-220 package, facilitating effective heat dissipation and ease of mounting on heat sinks.
This device is primarily used in scenarios requiring reliable operation under high-voltage conditions, such as in inverters, converters, and various electronic systems. Proper thermal management and gate drive voltage considerations are essential for optimal performance and longevity in circuits utilizing this MOSFET.

Features

The SVF4N65F is a high-voltage N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage circuits.
2. Continuous Drain Current: It supports a maximum continuous drain current (I_D) of 4A, allowing for substantial current flow.
3. Low Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is low (typically in the range of 2-4V), enabling easier drive control.
4. R_DS(on): It has a low on-resistance (R_DS(on)), which minimizes power loss during operation, enhancing efficiency.
5. Fast Switching Speed: The device features fast switching capabilities, making it ideal for applications like switch-mode power supplies (SMPS) and inverters.
6. Package Type: Typically available in a TO-220 package, providing good thermal performance and ease of heat dissipation.
Overall, the SVF4N65F is well-suited for use in high-efficiency power electronics applications.

Package

The SVF4N65F is packaged in a TO-220 format, which is a type of through-hole package commonly used for power transistors. This package provides excellent heat dissipation and is suitable for high-power applications.

Pinout

The SVF4N65F is a N-channel MOSFET with a total of 4 pins. The pinout and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A positive voltage applied here relative to the source allows current to flow from drain to source.
2. Drain (D): This pin is the output where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This is the reference pin for the MOSFET. Current flows out of the source when the device is conducting.
4. Body Diode (not a pin, but an internal feature): The SVF4N65F also contains a body diode that allows current to flow in the reverse direction when the MOSFET is off.
The SVF4N65F is designed for high-voltage applications, with a maximum drain-source voltage of 650V, making it suitable for power switching applications.

Manufacturer

The SVF4N65F is manufactured by Sanken Electric Co., Ltd. Sanken is a Japanese company known for its expertise in power semiconductor technologies, including transistors, diodes, and power modules. Founded in 1928, Sanken specializes in designing and producing high-performance electronic components primarily for applications in consumer electronics, industrial equipment, and automotive systems. The company is recognized for its commitment to innovation and quality in the semiconductor industry.

Application

The SVF4N65F is a high-voltage N-channel MOSFET commonly used in applications such as power supplies, motor control, and automotive electronics. It is suitable for tasks requiring high efficiency and fast switching, including DC-DC converters, switch-mode power supplies (SMPS), and inverters. Its ability to handle high voltages makes it ideal for industrial equipment and renewable energy systems like solar inverters.

Equivalent

The SVF4N65F is a MOSFET with a voltage rating of 650V and a current rating of 4A. Equivalent products include the STP4NK65Z, IRF840, and FQP4N65. Always check specific datasheets for exact specifications like RDS(on), VGS ratings, and package types to ensure compatibility for your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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