SUD50P06-15-GE3

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SUD50P06-15-GE3

MOSFET P-CH 60V 50A TO252

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 50A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 15mOhm @ 17A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 165 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4950 pF @ 25 V
PowerDissipation(Max) 2.5W (Ta), 113W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Vue d'ensemble

Description

The SUD50P06-15-GE3 is a N-channel MOSFET designed for power applications, featuring a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of up to 50A. It is ideal for switching applications where high efficiency and thermal performance are crucial. The device is characterized by its low on-resistance (RDS(on)), which minimizes power loss during operation, making it suitable for both industrial and consumer electronics.
This MOSFET is typically used in power supplies, motor drives, and other high-current applications. Its package type, often a TO-220 or equivalent, allows for effective heat dissipation. The SUD50P06-15-GE3 also includes a fast switching speed, which enhances system performance in PWM applications. When selecting this component, considerations such as gate drive voltage, thermal management, and switching frequency are essential for optimal operation.

Features

The SUD50P06-15-GE3 is an N-channel power MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: Continuous drain current (I_D) of 50A at a temperature of 25°C.
3. R_DS(on): Low on-resistance (typically around 10 mΩ), improving efficiency by reducing power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges between 2V to 4V, ensuring compatibility with low-voltage drive circuits.
5. Package: Available in a TO-220 package, facilitating easy heatsinking and mounting.
6. Fast Switching Speed: Suitable for high-frequency applications, enhancing performance in switching power supplies.
7. Thermal Resistance: Low thermal resistance, aiding in effective heat dissipation.
These features make the SUD50P06-15-GE3 ideal for applications in automotive, industrial, and consumer electronics.

Package

The SUD50P06-15-GE3 is packaged in a TO-220 style, which is a standard package type for power MOSFETs. This package provides good thermal performance and is suitable for applications requiring efficient heat dissipation.

Pinout

The SUD50P06-15-GE3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a total of three pins. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied here turns the MOSFET on or off.
2. Drain (D): This pin is where the load is connected. The current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply.
In summary, the SUD50P06-15-GE3 has a pin count of three, with the gate controlling the device, while the drain and source are involved in the power path.

Manufacturer

The SUD50P06-15-GE3 is manufactured by Sanken Electric Co., Ltd. Sanken Electric is a multinational company based in Japan, specializing in the design and production of semiconductor devices, power supplies, and related electronic components. Founded in 1928, Sanken focuses on providing solutions for industries such as consumer electronics, automotive, and industrial automation. The company is known for its innovations in power electronics and its commitment to high efficiency and reliability in its products.

Application

The SUD50P06-15-GE3 is a N-channel MOSFET designed for applications in power management, such as DC-DC converters, battery management systems, and motor controllers. Its low on-resistance and high current capability make it suitable for high-efficiency switching applications in consumer electronics, renewable energy systems, and automotive electronics.

Equivalent

The SUD50P06-15-GE3 is a N-channel MOSFET rated for 60V, 50A. Equivalent products include the IRF3205, STP50NF06L, and FQP50N06L. Ensure to check specifications such as V_DS, I_D, R_DS(on), and package type to confirm compatibility for your specific application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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