SUD19P06-60-GE3

Les images sont à titre de référence seulement

SUD19P06-60-GE3

MOSFET P-CH 60V 18.3A TO252

  • Fabricant
  • Mfr. Partie #SUD19P06-60-GE3
  • Paquet TO-252-3
  • Fiche de données
  • En stock6152

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 18.3A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 60mOhm @ 10A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 40 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1710 pF @ 25 V
PowerDissipation(Max) 2.3W (Ta), 38.5W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Vue d'ensemble

Description

SUD19P06-60-GE3 appears to be a specific course code, possibly related to a program in a higher education institution. While details on this exact course may not be readily available, courses with similar codes often cover specialized topics in fields like social sciences, health studies, or related areas. The "60" typically denotes the credit value, suggesting a substantial commitment, while "GE3" may indicate that it is a general education course or part of a specific program track.
For precise information, it would be best to consult the course catalog of the institution offering SUD19P06-60-GE3, where you'll find details on the syllabus, learning objectives, prerequisites, and assessment methods. If you have access to the educational institution's resources, they can provide up-to-date and relevant information on this course.

Features

The SUD19P06-60-GE3 is a 60V P-channel MOSFET designed for power switching applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: Can handle continuous drain current (I_D) of up to 19A, making it suitable for high-power applications.
3. Low On-Resistance: Offers a low R_DS(on) value, typically around 0.06 ohms, ensuring efficient operation and reduced heat generation during switching.
4. Fast Switching Speed: Designed for quick turn-on and turn-off times, enhancing efficiency in switching applications.
5. Thermal Resistance: Features a low thermal resistance, allowing for better heat dissipation and improved performance under load.
6. TO-220 Package: Comes in a TO-220 package, facilitating easy heat sinking and better thermal management.
This MOSFET is ideal for use in automotive, industrial, and consumer electronics applications, particularly in DC-DC converters and power management circuits.

Package

The SUD19P06-60-GE3 is packaged in a TO-220 form factor. This type of package is commonly used for power transistors and offers good thermal performance and ease of mounting on heat sinks.

Pinout

The SUD19P06-60-GE3 is a P-channel MOSFET typically used for power management applications. It features a TO-220 package with three pins.
Pin Configuration:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which the load current flows; it's where the output is connected.
3. Source (S) - The terminal connected to the power supply or ground, depending on the configuration.
The device is designed for high voltage and high current applications, offering a maximum drain-source voltage (V_DS) of -60V and a continuous drain current (I_D) of up to -19A. It provides low on-resistance (R_DS(on)), making it efficient for switching applications.

Manufacturer

The SUD19P06-60-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a leading global manufacturer of discrete semiconductors and passive electronic components. The company provides a wide range of products, including diodes, transistors, resistors, capacitors, and inductors, serving various industries such as automotive, telecommunications, industrial, and consumer electronics. Vishay is known for its high-quality components and innovation in electronic technologies, catering to both standard and custom applications.

Application

The SUD19P06-60-GE3 is a high-voltage, N-channel MOSFET commonly used in power management applications. Its areas of application include switching power supplies, motor control, and automotive systems. It is also suitable for use in DC-DC converters, LED drivers, and other electronic devices requiring efficient power switching and thermal performance.

Equivalent

The SUD19P06-60-GE3 is a P-channel MOSFET. Equivalent products include the FQP19P06, IRF9540, and STP19P06. Always check specifications and ratings to ensure compatibility for your specific application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire