STY145N65M5

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STY145N65M5

MOSFET N-CH 650V 138A MAX247

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Spécifications

Package Tube
Series MDmesh™ V
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 138A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 15mOhm @ 69A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 414 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 18500 pF @ 100 V
PowerDissipation(Max) 625W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage MAX247™

Vue d'ensemble

Description

STY145N65M5 is a specific grade of high-performance steel, typically used in applications that require exceptional strength and durability. It is often characterized by its excellent toughness, resistance to wear, and ability to withstand high temperatures. This steel grade is commonly employed in industries such as automotive, aerospace, and heavy machinery manufacturing.
The designation may refer to specific chemical compositions and mechanical properties, adhering to industry standards for quality assurance. Applications can include structural components, gears, and various high-stress parts that demand reliability and longevity.
Understanding the properties of STY145N65M5 is crucial for engineers and designers to ensure optimal performance in their respective applications. Proper processing and heat treatment can further enhance its characteristics, making it suitable for demanding environments.

Features

The STY145N65M5 is a N-channel power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: 650V, suitable for high-voltage applications.
2. RDS(on): Low on-resistance (approximately 0.145 ohms), which reduces conduction losses.
3. Current Rating: Can handle continuous drain currents up to 145A, making it ideal for robust power systems.
4. Gate Threshold Voltage: Typically between 2-4V, enabling easy drive with standard gate voltages.
5. Thermal Performance: Excellent thermal stability with a high maximum junction temperature, allowing for efficient heat dissipation.
6. Fast Switching: Capable of high-speed operation, reducing switching losses in applications such as converters and inverters.
7. Package Type: Available in a TO-220 package, facilitating easy mounting and effective heat management.
These characteristics make the STY145N65M5 suitable for various applications in power supplies, motor drives, and renewable energy systems.

Package

The STY145N65M5 is packaged in a TO-247 format. This package type is designed for high power and high voltage applications, offering efficient thermal performance and robust connections.

Pinout

The STY145N65M5 is a high-voltage N-channel MOSFET designed for power applications. It features a TO-247 package with a pin count of three. The pin configuration is as follows:
1. Gate (G): This pin controls the switching of the MOSFET. Applying a voltage to this pin turns the device on or off.
2. Drain (D): This pin connects to the load and is where the current flows out of the MOSFET when it is in the on state.
3. Source (S): This pin connects to the ground or the negative side of the power supply, completing the circuit when the MOSFET is activated.
The device is characterized by its high voltage rating (650V) and low on-resistance (R_DS(on)), making it suitable for applications like power supplies, inverters, and motor drives.

Manufacturer

The STY145N65M5 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in the design and manufacturing of a wide range of semiconductor products, including integrated circuits, discrete devices, and microcontrollers. The company serves various sectors, such as automotive, industrial, personal electronics, and communication. With a focus on innovation and technology, STMicroelectronics plays a significant role in advancing applications in areas like energy efficiency, automotive systems, and IoT (Internet of Things). It operates on a global scale, with facilities and operations in multiple countries.

Application

The STY145N65M5 is a high-performance IGBT (Insulated Gate Bipolar Transistor) used primarily in power electronics applications. Key areas include renewable energy systems (like solar inverters), industrial motor drives, electric vehicles (EVs), power supply units, and induction heating. Its efficiency and thermal performance make it suitable for high-voltage and high-current applications, contributing to energy efficiency in various sectors.

Equivalent

The STY145N65M5 is a N-channel MOSFET. Equivalent products include:
1. STMicroelectronics: STP145N65M5
2. Infineon: IPA145N65
3. ON Semiconductor: NTP145N65
4. Fairchild: FQD145N65
Verify specific parameters such as Rds(on), Vds, and current ratings to ensure compatibility for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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