STW9N150

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STW9N150

MOSFET N-CH 1500V 8A TO247-3

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Spécifications

Package Tube
Series PowerMESH™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1500 V
Current-ContinuousDrain(Id)@25°C 8A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 2.5Ohm @ 4A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 89.3 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 3255 pF @ 25 V
PowerDissipation(Max) 320W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

Vue d'ensemble

Description

The STW9N150 is a high-performance N-channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vds) of 150V and a continuous drain current (Id) rating of 9A, with a pulsed current capability higher than this. Its low on-resistance (Rds(on)), typically around 0.15 ohms, allows for efficient operation, minimizing heat generation and improving overall efficiency in applications like power supplies, motor drives, and DC-DC converters.
The STW9N150 is housed in a TO-220 package, which facilitates easy heat dissipation and makes it suitable for both through-hole and surface-mount applications. Its high-speed switching capabilities contribute to reduced switching losses at high frequencies, making it ideal for modern electronic circuits where efficiency is critical.
In summary, the STW9N150 offers a robust solution for designers seeking efficient power management and reliable performance in demanding environments.

Features

The STW9N150 is a high-voltage N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 150V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 9A, allowing it to handle substantial loads.
3. Low On-Resistance: With a low R_DS(on) typically around 0.7 ohms, it minimizes power loss during operation, enhancing efficiency.
4. Fast Switching Speed: Optimized for high-speed switching, it aids in reducing switching losses.
5. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges between 2V to 4V, providing flexibility in drive requirements.
6. Thermal Performance: It features a TO-220 package that supports effective heat dissipation, ensuring reliable operation under load.
7. Applications: Commonly used in motor drives, power supplies, and DC-DC converters.
Overall, the STW9N150 is a robust MOSFET suitable for various power electronic applications.

Package

The STW9N150 is typically packaged in a TO-247 form factor, which is a standard power MOSFET package designed for high-power applications. This package provides excellent thermal performance and is suitable for heat dissipation in various electronic circuits.

Pinout

The STW9N150 is a high-voltage N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows the device to turn on (conduct) or off (not conduct).
2. Drain (D): This is the terminal through which the current flows out of the MOSFET when it is in the on state. It connects to the load.
3. Source (S): This pin is connected to the ground or negative power supply, serving as the reference point for the voltage applied to the gate.
The STW9N150 is designed for applications requiring high voltage and current handling, with a maximum drain-source voltage (V_DS) of 150V and a continuous drain current (I_D) of up to 9A. Its features make it suitable for power management and switching applications.

Manufacturer

The STW9N150 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is recognized for its wide range of products, including integrated circuits, microcontrollers, and power management devices. The company operates in various sectors such as automotive, industrial, communications, and consumer electronics, focusing on innovation in energy efficiency, connectivity, and smart technology solutions. Headquartered in Geneva, Switzerland, STMicroelectronics has a significant presence across the globe, with multiple research and development facilities and manufacturing sites. The STW9N150 itself is a high-voltage N-channel MOSFET, commonly used in power management applications due to its efficiency and performance characteristics.

Application

The STW9N150 is a N-channel MOSFET typically used in high-voltage applications such as power supplies, motor drives, and industrial automation. Its low on-resistance and high-speed switching capabilities make it suitable for use in DC-DC converters, inverters, and renewable energy systems, like solar inverters. Additionally, it can be employed in automotive applications for power management and control systems.

Equivalent

The STW9N150 is a N-channel MOSFET with a voltage rating of 150V and a current rating of 9A. Equivalent products include:
1. IRF840
2. IRF150
3. FDPF9N150
4. MBRF9N150
5. FQPF9N150
Always verify specifications like RDS(on), VGS(th), and package type before replacement.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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