STW70N60M2

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STW70N60M2

MOSFET N-CH 600V 68A TO247

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Spécifications

Package Tube
Series MDmesh™ II Plus
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 68A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 40mOhm @ 34A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 118 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 5200 pF @ 100 V
PowerDissipation(Max) 450W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247

Vue d'ensemble

Description

The STW70N60M2 is a high-voltage N-channel MOSFET designed for power applications, primarily in switch-mode power supplies, motor control, and automotive electronics. It has a maximum drain-source voltage (V_DS) of 600V, a continuous drain current (I_D) of 70A, and a low on-resistance (R_DS(on)) of approximately 0.10 ohms, which enhances efficiency and reduces thermal losses during operation.
This MOSFET features a fast switching speed, making it suitable for high-frequency applications, and its insulated gate allows for easy driving. Its robust design includes a high level of avalanche rating, ensuring reliability under dynamic conditions. The package options typically include TO-220 and DPAK, facilitating integration into various circuit designs.
The STW70N60M2 is commonly used in applications such as DC-DC converters, inverters, and other power electronic circuits where high efficiency and thermal performance are critical. It represents a reliable choice for engineers seeking to optimize performance in demanding power applications.

Features

The STW70N60M2 is a N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: 600V maximum drain-source voltage, making it suitable for high-voltage circuits.
2. Current Rating: Continuous drain current of 70A, allowing it to handle substantial loads.
3. On-Resistance: Low R_DS(on) of approximately 0.18 ohms at V_GS = 10V, which contributes to high efficiency and reduced power loss.
4. Gate Threshold Voltage: V_GS(th) typically between 2 to 4V, offering flexibility in gate drive design.
5. Fast Switching: Optimized for fast switching speeds, beneficial for applications like switch-mode power supplies and inverters.
6. Thermal Performance: With a junction-to-case thermal resistance of 0.35 °C/W, it efficiently manages heat dissipation.
7. Package Type: Available in TO-247, facilitating easy mounting and good thermal conductivity.
Overall, the STW70N60M2 is ideal for power management in industrial and consumer electronics.

Package

The STW70N60M2 is packaged in a TO-247 format, which is a high-power package designed for efficient heat dissipation and easy mounting on heatsinks.

Pinout

The STW70N60M2 is a N-channel MOSFET manufactured by STMicroelectronics. It features a pin count of 3. The pins are typically assigned the following functions:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.

2. Drain (D): This pin is where the current enters the device when the MOSFET is turned on. It is connected to the load in the circuit.
3. Source (S): This pin is the output side of the MOSFET, where current exits. It is connected to the ground or negative side of the power supply in most applications.
The STW70N60M2 is known for its high voltage rating of 600V and a continuous drain current of up to 70A, making it suitable for various high-power applications.

Manufacturer

The STW70N60M2 is manufactured by STMicroelectronics, a multinational electronics and semiconductor manufacturer. Founded in 1987, STMicroelectronics is headquartered in Geneva, Switzerland, and operates globally. The company specializes in designing and manufacturing a wide range of semiconductor devices and technologies, including microcontrollers, sensors, power management devices, and discrete components like MOSFETs. STMicroelectronics serves various industries, including automotive, industrial, consumer electronics, and telecommunications, focusing on innovation and sustainability in their product offerings.

Application

The STW70N60M2 is a high-voltage N-channel MOSFET primarily used in power management applications. Its main application areas include switch-mode power supplies (SMPS), DC-DC converters, motor control, and induction heating. It is suitable for use in industrial equipment, consumer electronics, and renewable energy systems, due to its high efficiency and thermal performance.

Equivalent

The STW70N60M2 is a 600V N-channel MOSFET. Equivalent products include:
1. Infineon IPW70R060C6
2. ON Semiconductor NTP70N60
3. Vishay SILICONIX SQW70N60
4. Fairchild FDB70N60
5. NXP PSMN2R8-60
Always verify specifications such as R_DS(on), gate charge, and thermal characteristics for compatibility in your application.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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