STW58N60DM2AG

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STW58N60DM2AG

MOSFET N-CH 600V 50A TO247

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Spécifications

Package Tube
Series Automotive, AEC-Q101, MDmesh™ DM2
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 50A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 60mOhm @ 25A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 90 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 4100 pF @ 100 V
PowerDissipation(Max) 360W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

Vue d'ensemble

Description

The STW58N60DM2AG is a high-performance N-channel MOSFET manufactured by STMicroelectronics. It is specifically designed for use in power applications, offering a high voltage rating of 600V and a continuous current capability of 58A. The device features a low on-resistance (RDS(on)) value, which enhances its efficiency by minimizing power loss during operation.
Key characteristics include its fast switching speeds, making it suitable for applications in switch-mode power supplies, motor drivers, and other high-frequency circuits. The STW58N60DM2AG is housed in a TO-220 package, facilitating effective heat dissipation.
Additionally, its robust design allows it to handle high peak currents while maintaining reliability under various operational conditions. This MOSFET is ideal for engineers seeking efficient solutions in power management and conversion applications.

Features

The STW58N60DM2AG is a high-voltage N-channel MOSFET designed for power applications. Key features include:
- Voltage Rating: 600V, suitable for high-voltage applications.
- Current Rating: Can handle up to 58A continuous drain current.
- RDS(on): Low on-resistance of approximately 0.24Ω, which minimizes power losses.
- Gate Threshold Voltage: Typically between 2V to 4V, allowing for efficient drive characteristics.
- Package Type: Available in a TO-220 package, offering good thermal performance and heat dissipation.
- Fast Switching: Designed for high-speed switching applications, enhancing efficiency in power conversion.
- Robustness: Integrated with a body diode for improved performance in applications requiring reverse current conduction.
These features make the STW58N60DM2AG suitable for use in power supplies, motor drives, and other high-efficiency power conversion systems.

Package

The STW58N60DM2AG is packaged in a TO-247 form factor. This package type is used for high-power applications, providing good thermal performance and ease of mounting.

Pinout

The STW58N60DM2AG is an N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET and is where the input signal is applied.
2. Drain (D): The current flows out of this pin when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative terminal of the power supply, and current flows into this pin when the MOSFET is conducting.
The STW58N60DM2AG is designed for high-voltage applications, rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 58A. Its low R_DS(on) ensures efficient operation with minimal power loss. This MOSFET is often used in power supply circuits, motor control, and other high-voltage applications.

Manufacturer

The STW58N60DM2AG is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs and produces a wide range of electronic components, including integrated circuits and discrete devices for various applications, such as automotive, industrial, and consumer electronics. The company is known for its innovation in power management, microcontrollers, and sensing technologies, contributing to sectors like IoT, automotive, and industrial automation. STMicroelectronics is headquartered in Geneva, Switzerland, and operates on a global scale, providing solutions that enhance energy efficiency and performance across diverse electronic applications.

Application

The STW58N60DM2AG is a power MOSFET commonly used in various applications, including:
1. Switching Power Supplies: For efficient power conversion.
2. Motor Drives: In industrial and automotive motors.
3. DC-DC Converters: In renewable energy systems.
4. Inverters: For solar power systems.
5. Lighting Control: In LED drivers and dimmers.
Its high voltage and current handling capabilities make it suitable for these demanding applications.

Equivalent

The STW58N60DM2AG is a high-voltage power MOSFET. Equivalent products include:
1. IRFBC30 - Infineon
2. MTP50N60E - ON Semiconductor
3. FQP50N60 - Fairchild/ON Semiconductor
4. SPW38N60S5 - Infineon
5. STP58N60M2 - STMicroelectronics
When selecting an equivalent, ensure voltage, current ratings, and package type match your requirements.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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