STW56N60M2

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STW56N60M2

MOSFET N-CH 600V 52A TO247

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Spécifications

Supplier STMicroelectronics
Package Tube
Series MDmesh™ M2
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 52A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 55mOhm @ 26A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 91 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 3750 pF @ 100 V
PowerDissipation(Max) 350W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

Vue d'ensemble

Description

The STW56N60M2 is a high-voltage N-channel MOSFET designed for use in switching applications, particularly in power electronics. It features a breakdown voltage of 600V, a maximum continuous drain current of 56A, and a low on-resistance (R_DS(on)) of approximately 0.12 ohms, which allows for efficient operation and minimal power losses.
This MOSFET is suitable for a variety of applications, including power supplies, motor drives, and inverter circuits. Its fast switching capabilities make it ideal for high-frequency operations. Additionally, the device has a robust thermal performance, with a maximum junction temperature of 150°C, making it reliable in demanding environments.
The STW56N60M2 is packaged in a TO-220 format, allowing for effective heat dissipation and easy mounting on heat sinks. Overall, it is a versatile component widely used in modern electronic designs.

Features

The STW56N60M2 is an N-channel MOSFET featuring a maximum drain-source voltage (V_DS) of 600V, a continuous drain current (I_D) of 56A, and a pulsed drain current (I_D, pulsed) of 130A. It has a low on-resistance (R_DS(on)) of approximately 0.18 ohms at a gate-source voltage (V_GS) of 10V, which contributes to improved efficiency in power applications.
Key features include:
- Low Gate Charge (Q_g): Enhanced switching performance.
- High-speed operation: Suitable for high-frequency applications.
- Thermal Resistance: R θJA of 62°C/W, facilitating better thermal management.
- TO-220 package: Offers good thermal dissipation and easy mounting.
- Safe Operating Area (SOA): Ensures reliable performance under various conditions.
This device is ideal for use in power supply circuits, motor drives, and other high-voltage applications.

Package

The STW56N60M2 is typically packaged in a TO-247 type package. This package is designed for high-power applications, providing excellent thermal performance and allowing for easy mounting on heatsinks.

Pinout

The STW56N60M2 is a high-voltage N-channel MOSFET from STMicroelectronics, specifically designed for applications requiring high efficiency and fast switching. It features a total of 4 pins.
The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET's switching operation. A voltage applied to this pin turns the device on or off.
2. Drain (D): The terminal where the load is connected; current flows from drain to source when the MOSFET is on.
3. Source (S): The terminal connected to ground or negative side of the supply; current flows out of this pin when the device is conducting.
4. Body Diode: While not a separate pin, the device includes an intrinsic body diode between the drain and source, allowing current to flow in the reverse direction when the transistor is off.
This MOSFET is rated for a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 56A.

Manufacturer

The STW56N60M2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in the design and production of a wide range of semiconductor products, including analog ICs, microcontrollers, and power devices. The company serves various sectors, including automotive, industrial, consumer electronics, and telecommunications. STMicroelectronics is known for its innovation in power management solutions, with a focus on energy efficiency and sustainability.

Application

The STW56N60M2 is an N-channel MOSFET used in various applications, including power supplies, motor control, DC-DC converters, and renewable energy systems. Its high voltage and current ratings make it suitable for switching applications in industrial automation, lighting control, and automotive electronics. Additionally, it can be utilized in high-frequency applications and as a switch in high-power circuits.

Equivalent

The STW56N60M2 is an N-channel MOSFET with a 600V, 56A rating. Equivalent products include the IRFHV560, FQP56N60, and BUK556-600. Always verify specifications such as RDS(on), gate threshold voltage, and package type to ensure compatibility.

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TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

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Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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