STW50N65DM2AG

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STW50N65DM2AG

MOSFET N-CH 650V 28A TO247

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  • Mfr. Partie #STW50N65DM2AG
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Spécifications

Series MDmesh™ DM2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 87mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 100 V
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number STW50

Vue d'ensemble

Description

The STW50N65DM2AG is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. With a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 50A, it is suitable for use in various switching applications, including power supplies, motor drives, and converters.
This device features low on-resistance (R_DS(on)), which minimizes power losses during operation, enhancing overall efficiency. It also boasts fast switching speeds, making it ideal for high-frequency applications. The STW50N65DM2AG is housed in a TO-220 package, facilitating efficient heat dissipation.
Its key specifications include a maximum gate-source voltage (V_GS) of ±20V, a total gate charge (Q_g) of 67nC, and a thermal resistance of 1.5°C/W. Designed for robustness, it provides reliability in demanding environments.
Overall, the STW50N65DM2AG is a versatile component for engineers seeking high-performance solutions in power electronics.

Features

The STW50N65DM2AG is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: 650V maximum drain-source voltage, suitable for high-voltage applications.
2. Current Rating: Continuous drain current capability of 50A, allowing it to handle significant loads.
3. RDS(on): Low on-resistance of about 0.050 Ω, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: Allows for efficient drive with a gate threshold voltage (VGS(th)) ranging from 2V to 4V.
5. Fast Switching: Designed for fast switching speeds, making it ideal for applications like power supplies and converters.
6. TO-220 Package: Provides good thermal performance and ease of mounting.
7. Robustness: High avalanche rating and ruggedness for reliable operation in demanding environments.
These features make the STW50N65DM2AG suitable for applications such as industrial power supplies, motor drives, and other power electronic circuits.

Package

The STW50N65DM2AG is housed in a TO-220 package type. This package is commonly used for power MOSFETs, providing efficient thermal management and ease of mounting on heatsinks.

Pinout

The STW50N65DM2AG is an N-channel MOSFET from STMicroelectronics. It has a total of 5 pins. The pinout and their functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching operation by applying voltage to turn it on or off.
2. Drain (D): This pin is where the output current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is connected to the ground or negative side of the circuit, completing the circuit when the MOSFET is activated.
4. Source (S): Often, the source pin is also used for thermal and electrical connection, but it is primarily labeled as the source.
5. Gate (G): Again, sometimes labeled to indicate the necessity of connecting the gate appropriately in circuit layout.
This MOSFET is designed for high voltage applications, rated at 650V, and is suitable for use in power management and switching applications.

Manufacturer

The manufacturer of the STW50N65DM2AG is STMicroelectronics. STMicroelectronics is a multinational electronics and semiconductor manufacturer headquartered in Geneva, Switzerland. The company specializes in a wide range of products, including microcontrollers, sensors, power management devices, and analog ICs. It serves various markets such as automotive, industrial, personal electronics, and communication equipment. STMicroelectronics is known for its focus on innovation and sustainability, contributing to the development of technologies that enhance energy efficiency and connectivity.

Application

The STW50N65DM2AG is a N-channel power MOSFET used in various applications, including automotive systems, power supplies, motor control, and industrial automation. Its high voltage and current handling capabilities make it suitable for switching applications in converters, inverters, and power management circuits. Additionally, it is utilized in renewable energy systems, such as solar inverters, and for electric vehicle (EV) powertrains.

Equivalent

The STW50N65DM2AG is a N-channel MOSFET with 650V rating and 50A current capability. Equivalent products include:
1. IRF320 - 650V, 50A
2. FQP50N65 - 650V, 50A
3. MTP50N65 - 650V, 50A
4. BSC050N65 - 650V, 50A
Ensure to check specific parameters like Rds(on) and thermal performance for exact applications.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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