STW45N65M5

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STW45N65M5

MOSFET N-CH 650V 35A TO247

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Spécifications

Supplier STMicroelectronics
Package Tube
Series MDmesh™ V
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 35A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 78mOhm @ 19.5A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 91 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3375 pF @ 100 V
PowerDissipation(Max) 210W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

Vue d'ensemble

Description

The STW45N65M5 is a N-channel power MOSFET designed for high-efficiency applications, including switch-mode power supplies and motor drivers. It features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) rating of 45A, making it suitable for high-voltage and high-current operations.
Key specifications include a low on-resistance (R_DS(on)) of around 0.045 ohms, which minimizes power losses during operation, enhancing overall efficiency. The MOSFET is housed in a TO-220 package, allowing for efficient heat dissipation.
The STW45N65M5 also incorporates fast switching capabilities, reducing turn-on and turn-off losses, making it ideal for applications requiring high-frequency operation. Its robust design and thermal performance make it a reliable choice for industrial and consumer electronics, where efficiency and reliability are crucial.
In summary, the STW45N65M5 is a versatile and efficient power MOSFET suitable for a range of demanding applications in power electronics.

Features

The STW45N65M5 is a high-voltage N-channel MOSFET designed for a wide range of applications, including power supplies, motor drives, and industrial equipment. Key features include:
1. Voltage Rating: 650V, suitable for high-voltage applications.
2. Current Rating: Continuous drain current of 45A, enabling high power handling.
3. Low RDS(on): With a low on-resistance of around 0.55Ω, it ensures efficient operation and reduced power loss.
4. Gate Threshold Voltage: VGS(th) typically ranges from 2V to 4V, allowing for easier drive circuit designs.
5. Fast Switching Speed: Designed for high-speed switching, enhancing efficiency in switch-mode power supply applications.
6. Thermal Performance: Capable of operating at high temperatures, with a maximum junction temperature of 175°C.
7. TO-220 Package: Offers good thermal dissipation for high-power applications.
Overall, the STW45N65M5 is an efficient and reliable choice for high-voltage and high-current applications, combining performance with thermal stability.

Package

The STW45N65M5 is packaged in a TO-247 housing. This type of package is commonly used for high-power applications, providing good thermal performance and ease of mounting.

Pinout

The STW45N65M5 is an N-channel MOSFET with a total of 3 pins. Its pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.

2. Drain (D): This pin is where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the voltage supply in typical applications.
The STW45N65M5 is designed for high-voltage applications and can handle a maximum drain-source voltage of 650V and a continuous drain current of up to 45A, making it suitable for power electronics applications such as switch-mode power supplies and motor drives.

Manufacturer

The STW45N65M5 is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. Founded in 1987, STMicroelectronics is a leading manufacturer of a wide range of semiconductor devices, including power transistors, microcontrollers, sensors, and integrated circuits. The company serves various markets such as automotive, industrial, personal electronics, and communication equipment.
STMicroelectronics is known for its innovation in power management and energy-efficient solutions, contributing to advancements in technology and sustainability. Its products are integral to applications ranging from consumer electronics to complex industrial systems. The company's focus on research and development enables it to stay at the forefront of the semiconductor industry, driving growth and technological progress.

Application

The STW45N65M5 is a high-voltage, N-channel MOSFET primarily used in applications such as power supplies, motor drives, and inverter circuits. Its low on-resistance and high-speed switching capabilities make it suitable for use in automotive applications, renewable energy systems (like solar inverters), and industrial power management. Additionally, it is effective in telecommunication equipment and lighting systems, enhancing efficiency and performance in various electronic circuits.

Equivalent

The STW45N65M5 is a N-channel MOSFET with a voltage rating of 650V and a continuous drain current of 45A. Equivalent products include:
1. Infineon IRF840
2. ON Semiconductor NTP65N65
3. Texas Instruments CSD18532Q5B
4. Fairchild FQP45N65
Always check specific datasheets for precise specifications and performance characteristics before substitution.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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