STW34NM60N

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STW34NM60N

MOSFET N-CH 600V 29A TO247-3

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Spécifications

Package Tube
Series MDmesh™ II
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 29A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 105mOhm @ 14.5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 80 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 2722 pF @ 100 V
PowerDissipation(Max) 250W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

Vue d'ensemble

Description

The STW34NM60N is a high-performance N-channel MOSFET designed for power applications, particularly in switch-mode power supplies and motor control. It features a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) rating of 34A. With a low on-resistance (Rds(on)) of approximately 0.034 ohms, it minimizes power losses, enhancing efficiency in circuits.
The device is housed in a TO-220 package, which provides good thermal performance, allowing for effective heat dissipation during operation. The STW34NM60N is suitable for applications requiring fast switching speeds and high reliability, making it ideal for synchronous rectification and inverters.
Additionally, the MOSFET is designed with a robust gate oxide structure to withstand high-voltage spikes, ensuring durability in harsh environments. Overall, the STW34NM60N is a versatile component that aids in achieving improved performance and efficiency in various electronic circuits.

Features

The STW34NM60N is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of 34A at a temperature of 25°C, allowing for significant power handling.
3. R_DS(on): Low on-resistance (approximately 0.34 ohms at V_GS = 10V), which minimizes power losses during operation.
4. Gate Threshold Voltage (V_GS(th)): Range of 2 to 4V, enabling it to be driven effectively with standard logic levels.
5. Fast Switching: Suitable for high-frequency applications due to its low gate charge (Q_g), enhancing efficiency in switching operations.
6. Thermal Performance: Comes in a TO-220 package, providing good thermal dissipation capabilities.
These features make the STW34NM60N ideal for applications such as switch-mode power supplies, motor drivers, and other power management systems.

Package

The STW34NM60N is typically packaged in a TO-220 package type. This package allows for efficient heat dissipation and is commonly used for power MOSFETs in various applications.

Pinout

The STW34NM60N is a N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This is the control pin used to turn the MOSFET on or off by applying a voltage.
2. Drain (D): This pin connects to the load; current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin connects to the ground or the negative side of the power supply in a typical configuration.
The STW34NM60N is rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 34A, making it suitable for high-voltage and high-current applications, such as power supplies, motor drives, and inverters.

Manufacturer

The STW34NM60N is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for producing a wide range of electronic components, including power management devices, microcontrollers, and sensors. The company serves various markets, including automotive, industrial, personal electronics, and communication, making it a key player in the semiconductor industry. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is recognized for its innovation and commitment to sustainability in technology development.

Application

The STW34NM60N is a N-channel MOSFET typically used in power electronics applications such as power supplies, motor drives, and converters. Its high voltage and current ratings make it suitable for switch-mode power supplies (SMPS), inverters, and audio amplifiers. It can also be employed in automotive applications and industrial equipment where efficiency and thermal performance are critical.

Equivalent

The STW34NM60N is a N-channel MOSFET with a 600V rating, 34A current, and Rds(on) of 0.34Ω. Equivalent products include:
1. IRFHC40
2. MTP50N60E
3. FQP50N60
4. IXFH34N60P
Always verify specifications like voltage, current, and Rds(on) before substitution.

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TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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