STW33N60M2

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STW33N60M2

MOSFET N-CH 600V 26A TO247

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Spécifications

Package Tube
Series MDmesh™ II Plus
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 26A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 125mOhm @ 13A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 45.5 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 1781 pF @ 100 V
PowerDissipation(Max) 190W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

Vue d'ensemble

Description

The STW33N60M2 is a high-voltage N-channel MOSFET from STMicroelectronics, designed for power conversion applications. It features a voltage rating of 600V and a continuous drain current of up to 33A, making it suitable for use in switch-mode power supplies (SMPS), motor drives, and lighting applications.
Key specifications include a low on-resistance (Rds(on)) of approximately 0.18 ohms, which enhances efficiency by reducing power losses during operation. The device is packaged in a TO-220 format, facilitating effective heat dissipation.
The STW33N60M2 is characterized by fast switching capabilities, enabling higher frequency operation and improved performance in various applications. It also includes a high maximum gate-to-source voltage (±30V), ensuring robust gate control.
Overall, the STW33N60M2 is recognized for its reliability, efficiency, and versatility in high-power electronic designs.

Features

The STW33N60M2 is a high-voltage N-channel MOSFET designed for various applications including power supply, motor control, and energy conversion. Key features include:
- Voltage Rating: 600V, allowing it to handle high-voltage applications safely.
- Current Rating: 33A, providing substantial current handling capacity.
- RDS(on): Low on-state resistance (typically 0.18Ω), which reduces conduction losses and improves efficiency.
- Gate Threshold Voltage: VGS(th) between 2V to 4V, enabling easy drive from standard logic levels.
- Fast Switching Speed: Low gate charge (Qg) of around 30nC, facilitating high-frequency operation.
- Package Type: Available in TO-220 and DPAK, offering flexibility in thermal management and space constraints.
- Robustness: Rated for avalanche capability, enhancing reliability in transient conditions.
These features make the STW33N60M2 suitable for applications in switch-mode power supplies, inverters, and other high-efficiency circuits.

Package

The STW33N60M2 is packaged in a TO-220 form factor. This package type is known for its efficient heat dissipation and is commonly used in power applications such as switching regulators and inverters.

Pinout

The STW33N60M2 is an N-channel MOSFET with a pin count of 3. The primary functions of its pins are as follows:
1. Gate (G): This pin controls the turning on and off of the MOSFET. A positive voltage relative to the source allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET when it is in the 'on' state.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to ground or a lower voltage rail in an application.
The STW33N60M2 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and continuous drain current (I_D) of up to 33A, making it suitable for various power electronics applications.

Manufacturer

The STW33N60M2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is involved in the design, development, manufacture, and marketing of a wide range of semiconductor products, including discrete and analog components, microcontrollers, and memory devices. The company serves various sectors such as automotive, industrial, consumer electronics, and communication. Established in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is known for its commitment to innovation and quality, providing solutions that enhance energy efficiency and performance in electronic applications.

Application

The STW33N60M2 is a high-voltage N-channel MOSFET used in various applications, including power supplies, motor drives, and switching regulators. Its characteristics make it suitable for automation, renewable energy systems, and industrial control. Additionally, it is often utilized in lighting applications and audio amplifiers due to its efficiency and thermal performance.

Equivalent

The STW33N60M2 is a 600V N-channel MOSFET. Equivalent products include:
1. IRF320 - N-channel MOSFET, 60V.
2. STP33NF60 - 600V, 33A.
3. FQP33N60C - 600V, 33A.
4. MTP33N60E - 600V, 33A.
Always verify specific electrical characteristics to ensure compatibility with your application.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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