STW33N60DM2

Les images sont à titre de référence seulement

STW33N60DM2

MOSFET N-CH 600V 24A TO247

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Supplier STMicroelectronics
Package Tube
Series MDmesh™ DM2
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 24A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 130mOhm @ 12A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 43 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 1870 pF @ 100 V
PowerDissipation(Max) 190W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

Vue d'ensemble

Description

The STW33N60DM2 is a high-voltage N-channel MOSFET designed for power conversion applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 33A, making it suitable for use in industrial, automotive, and renewable energy applications such as switch-mode power supplies, inverters, and motor drives.
Key specifications include low on-resistance (R_DS(on)) for improved efficiency, fast switching capabilities, and a high-speed gate charge. The device's rugged construction and thermal performance ensure reliability under demanding conditions. The STW33N60DM2 is often used in circuits requiring efficient power management and can handle high-frequency operations.
The MOSFET is housed in a TO-220 package, allowing for effective heat dissipation. Its performance characteristics make it an ideal choice for engineers designing efficient power electronic systems. For detailed implementation, refer to the manufacturer's datasheet for thermal and electrical characteristics.

Features

The STW33N60DM2 is a high-voltage N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: 600V, suitable for high-voltage applications.
2. Current Rating: 33A continuous drain current, allowing for significant power handling.
3. On-Resistance (Rds(on)): Low on-resistance of 0.25 Ω (at Vgs = 10V), ensuring efficient performance with minimal power loss.
4. Gate Threshold Voltage: 2 to 4V, enabling operation with standard gate drive levels.
5. Fast Switching: Optimized for fast switching applications, reducing losses in high-frequency operations.
6. Thermal Resistance: Good thermal performance with a maximum junction temperature of 175°C.
7. Package Type: Available in a TO-220 package, facilitating easy mounting and heat dissipation.
These features make the STW33N60DM2 ideal for applications such as switch-mode power supplies, motor drives, and inverters.

Package

The STW33N60DM2 is packaged in a TO-220 type package, which is a common package for power MOSFETs, providing good thermal performance and ease of heat sinking in various applications.

Pinout

The STW33N60DM2 is an N-channel MOSFET with a pin count of 3. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching action. A voltage applied to the gate allows the device to conduct between the drain and source.

2. Drain (D): This is the output pin where the current flows out of the MOSFET when it is in the 'on' state.
3. Source (S): This pin is the input for the current and is connected to the ground in typical applications.
The STW33N60DM2 is designed for high-voltage applications, rated for 600V and can handle continuous currents up to 33A, making it suitable for various power switching applications in power supplies and motor controls.

Manufacturer

The STW33N60DM2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in the design, manufacturing, and marketing of a wide range of electronic components, including microcontrollers, integrated circuits, and power management devices. The company serves various sectors, including automotive, industrial, personal electronics, and communication. STMicroelectronics is known for its innovation in semiconductor technology and its commitment to sustainability and energy-efficient products.

Application

The STW33N60DM2 is a 600V N-channel MOSFET primarily used in high-voltage applications such as power supplies, motor drives, and industrial equipment. Its low on-resistance and fast switching capabilities make it suitable for use in switch-mode power supplies (SMPS), inverters, and DC-DC converters. Additionally, it can be employed in lighting controls and automotive applications for efficient power management and control.

Equivalent

The STW33N60DM2 is a N-channel MOSFET with a voltage rating of 600V and a current rating of 33A. Equivalent products include the IRFBC30N60, MTP30N60E, FGH60N60SMD, and STP33N60M2. Always verify specifications such as Rds(on) and gate threshold voltage to ensure compatibility for your application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire