STW26NM60N

Les images sont à titre de référence seulement

STW26NM60N

MOSFET N-CH 600V 20A TO247-3

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Package Tube
Series MDmesh™ II
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 20A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 165mOhm @ 10A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 60 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1800 pF @ 50 V
PowerDissipation(Max) 140W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

Vue d'ensemble

Description

The STW26NM60N is a high-voltage N-channel MOSFET designed for various power applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 26A, making it suitable for switching and amplification functions in power electronics. The device has a low on-resistance (R_DS(on)), typically around 0.18 ohms, which minimizes conduction losses and improves efficiency in applications like power supplies, motor controls, and inverters.
This MOSFET is housed in a TO-220 package, allowing for effective heat dissipation, which is crucial for high-performance operations. It also exhibits fast switching times, enhancing its performance in high-frequency applications. The STW26NM60N is characterized by its robustness, making it ideal for industrial applications, automotive systems, and renewable energy solutions. Overall, it provides a reliable and efficient option for managing high-voltage and high-current operations in modern electronic designs.

Features

The STW26NM60N is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
- Voltage Rating: 600V, making it suitable for high-voltage applications.
- Continuous Drain Current: 26A, allowing for robust current handling.
- R_DS(on): Low on-resistance of 0.26Ω (at VGS = 10V), which minimizes conduction losses.
- Gate Threshold Voltage (VGS(th)): Ranges from 2V to 4V, facilitating easier drive requirements.
- Package Type: Available in TO-220, facilitating effective heat dissipation.
- High-speed Switching: Capable of fast switching, beneficial for efficiency in power supply circuits.
- Thermal Resistance: Low thermal resistance ensures effective heat management.
- Applications: Suitable for use in switch-mode power supplies (SMPS), motor drivers, and other high-frequency applications.
Overall, the STW26NM60N combines high voltage capability with efficient performance, making it an excellent choice for a variety of electronic designs.

Package

The STW26NM60N is typically packaged in a TO-220 format. This type of package is designed for efficient heat dissipation and is commonly used for power MOSFETs in applications requiring high voltage and current handling.

Pinout

The STW26NM60N is a N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's operation by turning it on or off.
2. Drain (D): The terminal through which the current flows out of the MOSFET when it is in the on state.
3. Source (S): The terminal through which the current enters the MOSFET.
This MOSFET is rated for a voltage of 600V and a continuous current of 26A, making it suitable for high-voltage applications such as power supplies, motor control, and automotive systems. It features a low on-resistance, which enhances efficiency and reduces heat generation during operation.

Manufacturer

The STW26NM60N is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor products, including microcontrollers, sensors, and power management devices. The company serves various industries, including automotive, industrial, consumer electronics, and telecommunications. STMicroelectronics is known for its innovative technologies and commitment to sustainability, focusing on energy-efficient solutions and advanced semiconductor manufacturing processes.

Application

The STW26NM60N is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its typical areas include switch-mode power supplies (SMPS), DC-DC converters, motor drivers, and lighting control systems. It is also suitable for high-frequency applications and provides efficient performance in industrial, automotive, and consumer electronics.

Equivalent

The STW26NM60N is a N-channel MOSFET with a 600V rating and a 26A continuous current capacity. Equivalent products include:
1. IRFHC30N60 (Infineon)
2. FQP30N60C (ON Semiconductor)
3. MGE30N60 (Mitsubishi)
4. STP30NM60 (STMicroelectronics)
Always check specifications for compatibility in your application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire