STW24N60M2

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STW24N60M2

MOSFET N-CH 600V 18A TO247

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Spécifications

Package Tube
Series MDmesh™ II Plus
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 190mOhm @ 9A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 29 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 1060 pF @ 100 V
PowerDissipation(Max) 150W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

Vue d'ensemble

Description

The STW24N60M2 is a high-performance N-channel MOSFET designed for various power applications. It features a voltage rating of 600V and a continuous drain current of 24A, making it suitable for high-voltage switching and power management tasks. With a low on-state resistance (R_DS(on)), it ensures efficient operation and reduced power losses.
This MOSFET is often used in applications such as switch-mode power supplies (SMPS), motor drivers, and other power converters. The device's fast switching capabilities and thermal performance are enhanced by its TO-220 package, allowing for effective heat dissipation.
Additionally, the STW24N60M2 is characterized by a high gate threshold voltage and can be easily driven by standard gate drivers. Its ruggedness and reliability make it a popular choice in industrial and consumer electronics. Overall, the STW24N60M2 is an excellent choice for engineers seeking reliable, efficient components for high-voltage applications.

Features

The STW24N60M2 is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: 600V, suitable for high-voltage power supply circuits.
2. Continuous Drain Current: Up to 24A, allowing efficient current handling in various applications.
3. RDS(on): Low on-state resistance (~0.18 ohms), which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage: Typically 2-4V, facilitating easy driving with standard gate voltages.
5. Fast Switching Speed: Optimized for high-speed switching, making it suitable for power converter applications.
6. Thermal Resistance: Good thermal performance with a low junction-to-case thermal resistance, ensuring reliable operation under high temperatures.
7. TO-220 Package: Offers effective heat dissipation and ease of mounting.
These features make the STW24N60M2 ideal for applications in power supplies, inverters, and motor drives.

Package

The STW24N60M2 is packaged in a TO-247 package type, which is designed for high-power applications, offering good thermal performance and easy mounting.

Pinout

The STW24N60M2 is an N-channel MOSFET with a total of 3 pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the current enters the MOSFET. It connects to the load.
3. Source (S): This terminal is where the current exits the MOSFET and is typically connected to ground or a lower potential in the circuit.
The STW24N60M2 is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 24A. It also features low on-resistance, making it suitable for power switch applications.

Manufacturer

The STW24N60M2 is manufactured by STMicroelectronics, a multinational electronics and semiconductor manufacturer headquartered in Geneva, Switzerland. The company specializes in a wide range of products, including microcontrollers, power management ICs, sensors, and discrete components. STMicroelectronics serves various industries such as automotive, industrial, consumer electronics, and communications, providing innovative solutions for both analog and digital applications. With a strong focus on sustainability and technology advancement, STMicroelectronics plays a significant role in the global semiconductor market.

Application

The STW24N60M2 is a high-voltage N-channel MOSFET, commonly used in various applications including power supplies, DC-DC converters, motor drives, and electric vehicle systems. It is suitable for switching applications due to its low on-resistance and high efficiency, making it ideal for industrial and consumer electronics where energy efficiency and thermal performance are critical.

Equivalent

Equivalent products to the STW24N60M2 MOSFET include the IRF240, FQP24N60, and STP24NM60. These transistors share similar specifications such as voltage and current ratings, making them suitable substitutes. Always verify the specific parameters, such as RDS(on) and gate threshold voltage, for compatibility in your application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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