STW20NM60

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STW20NM60

MOSFET N-CH 600V 20A TO247-3

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Spécifications

Package Tube
Series MDmesh™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 20A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 290mOhm @ 10A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 54 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1500 pF @ 25 V
PowerDissipation(Max) 192W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

Vue d'ensemble

Description

The STW20NM60 is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications such as power management and motor control. It features a maximum drain-source voltage of 600V and a continuous drain current rating of 20A at a case temperature of 25°C. The device has a low on-resistance (RDS(on)), typically around 0.24 ohms, which minimizes power losses during operation.
The STW20NM60 is characterized by its fast switching capabilities, making it suitable for high-frequency applications. It typically includes a built-in gate protection feature to enhance reliability. The MOSFET comes in a TO-220 package, facilitating easy heat dissipation and mounting.
Applications include switch-mode power supplies (SMPS), industrial and automotive power converters, and other high-voltage applications. Overall, the STW20NM60 is an efficient and reliable choice for designers looking for robust performance in high-voltage environments.

Features

The STW20NM60 is a high-voltage N-channel power MOSFET designed for various applications in power electronics. Key features include:
1. Voltage Rating: It can withstand a maximum drain-source voltage (VDS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The MOSFET can handle a continuous drain current (ID) of up to 20A at a case temperature of 25°C.
3. On-Resistance: It has a low on-resistance (RDS(on)) of around 0.20 ohms, which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) ranges from 2 to 4V, allowing for easy driving with standard logic levels.
5. Fast Switching: The STW20NM60 features fast switching times, making it suitable for switching applications in power supplies and converters.
6. Thermal Performance: Designed with robust thermal characteristics, it supports heat dissipation, essential for high-power applications.
These features make the STW20NM60 ideal for use in various applications, including motor drives, switch-mode power supplies, and inverters.

Package

The STW20NM60 is typically available in a TO-220 package type. This package provides good thermal performance and is suitable for power applications, allowing for efficient heat dissipation.

Pinout

The STW20NM60 is a power MOSFET from STMicroelectronics, featuring a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is connected to the load. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the negative side of the power supply. It serves as the return path for the current flowing through the device.
The STW20NM60 is designed for high-voltage applications, with a maximum voltage rating of 600V and a continuous drain current of up to 20A, making it suitable for various power switching applications.

Manufacturer

The STW20NM60 is manufactured by STMicroelectronics, a multinational electronics and semiconductor manufacturer. Founded in 1987, STMicroelectronics specializes in a wide range of products, including microcontrollers, sensors, power management devices, and various semiconductor components. The company serves diverse markets such as automotive, industrial, personal electronics, and communication. STMicroelectronics is known for its innovation and commitment to sustainability, aiming to develop technology that improves energy efficiency and environmental impact.

Application

The STW20NM60 is a 600V N-channel MOSFET widely used in applications such as switch-mode power supplies, motor drives, and inverters. Its high voltage capability and low on-resistance make it suitable for power electronics in consumer appliances, renewable energy systems (like solar inverters), industrial power converters, and automotive applications, particularly in electric vehicles and hybrid systems.

Equivalent

The STW20NM60 is a 600V N-channel MOSFET. Equivalent products include the IRF840, FQP20N60, and MTP20N60. Check the specific ratings, such as RDS(on), gate charge, and package type, to ensure compatibility for your application.

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TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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