STW12N120K5

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STW12N120K5

MOSFET N-CH 1200V 12A TO247

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Spécifications

Package Tube
Series MDmesh™ K5
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1200 V
Current-ContinuousDrain(Id)@25°C 12A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 690mOhm @ 6A, 10V
Vgs(th)(Max)@Id 5V @ 100µA
GateCharge(Qg)(Max)@Vgs 44.2 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1370 pF @ 100 V
PowerDissipation(Max) 250W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

Vue d'ensemble

Description

The STW12N120K5 is a N-channel power MOSFET developed by STMicroelectronics, designed for high-voltage applications. It features a maximum drain-source voltage (V_DS) of 1200V and a continuous drain current (I_D) of 12A at 25°C, making it suitable for power conversion, industrial applications, and motor drives. The device is housed in a TO-220 package, facilitating efficient thermal management.
With low on-resistance (R_DS(on)) and fast switching capabilities, the STW12N120K5 minimizes power losses, enhancing efficiency in various applications. Its gate threshold voltage (V_GS(th)) is designed to ensure easy drive capability with standard gate drive circuits.
Key specifications include a maximum gate-source voltage (V_GS) of ±20V, a total gate charge (Q_g) that allows for quick switching, and high ruggedness against avalanche conditions, ensuring reliability under harsh operating conditions. This makes the STW12N120K5 a popular choice for engineers looking to design robust, efficient power electronic systems.

Features

The STW12N120K5 is a high-voltage N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 1200V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (Id) of up to 12A at a temperature of 25°C.
3. RDS(on): It features a low on-resistance (RDS(on)) of approximately 0.14 ohms, reducing conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 2V to 4V, ensuring efficient turn-on characteristics.
5. Fast Switching: The MOSFET is designed for fast switching times, enabling improved efficiency in power conversion applications.
6. Package Type: It is available in a TO-220 package, facilitating easy mounting and heat dissipation.
7. Applications: Commonly used in switch-mode power supplies, inverter applications, and motor control circuits.
Overall, the STW12N120K5 is ideal for high-efficiency power management solutions in demanding environments.

Package

The STW12N120K5 is packaged in a TO-247 housing. This package type is designed for high-power applications, providing efficient thermal management and robust electrical performance.

Pinout

The STW12N120K5 is an N-channel MOSFET with a total of three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows the device to turn on, enabling current to flow between the drain and source.
2. Drain (D): The drain pin is where the current enters the MOSFET when it is in the "on" state.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to the ground or the lower potential in the circuit.
The STW12N120K5 is designed for high-voltage applications, with a breakdown voltage of 1200V and a continuous drain current rating of 12A, making it suitable for power switching applications.

Manufacturer

The STW12N120K5 is manufactured by STMicroelectronics, a global semiconductor company based in Switzerland. Established in 1987, STMicroelectronics designs and manufactures a wide range of electronic components and systems, including microcontrollers, sensors, and power management devices. The company serves various sectors, such as automotive, industrial, consumer electronics, and communications, focusing on innovation and sustainability. As a leader in the semiconductor industry, STMicroelectronics is known for its commitment to research and development, providing high-quality solutions that enable efficient and advanced technologies.

Application

The STW12N120K5 is an N-channel MOSFET typically used in high-voltage applications such as power supplies, motor drivers, and industrial equipment. Its features make it suitable for switch-mode power supplies (SMPS), DC-DC converters, and inverters. Additionally, it can be employed in automotive applications, lighting control systems, and other power management circuits where efficient switching and thermal performance are critical.

Equivalent

The STW12N120K5 is a N-channel MOSFET with a voltage rating of 1200V and a current rating of 12A. Equivalent products include:
1. IRF840
2. STP12NK60Z
3. MTP12N120
4. FQP12N120
5. PST120N12
Always verify specifications such as RDS(on), gate charge, and thermal characteristics before substitution.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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