STP80NF55-08

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STP80NF55-08

MOSFET N-CH 55V 80A TO220AB

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Spécifications

Package Tube
Series STripFET™
ProductStatus Not For New Designs
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 55 V
Current-ContinuousDrain(Id)@25°C 80A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 8mOhm @ 40A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 155 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3850 pF @ 25 V
PowerDissipation(Max) 300W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

Vue d'ensemble

Description

The STP80NF55-08 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency switching applications. It features a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) of 80A, making it suitable for power management in various electronic devices. With a low on-resistance (R_DS(on)) of approximately 0.018 ohms, it minimizes power losses during operation, enhancing overall efficiency.
This MOSFET is characterized by its fast switching capability, which is beneficial in applications such as DC-DC converters, motor drivers, and power supplies. It operates at a high temperature range, typically up to 175°C, and is packaged in a TO-220 format, facilitating easy thermal management.
The STP80NF55-08 is commonly used in automotive, industrial, and consumer electronics due to its reliability and performance. Overall, it is an essential component for designers seeking efficient and effective power control solutions.

Features

The STP80NF55-08 is an N-channel MOSFET designed for various power applications. Here are its key features:
1. Voltage Rating: Drain-source voltage (V_DS) of 55V, suitable for medium-voltage applications.

2. Current Rating: Continuous drain current (I_D) of up to 80A, providing high current handling capabilities.
3. R_DS(on): Low on-resistance (typically 8 mΩ at V_GS = 10V), which reduces power loss and improves efficiency.
4. Gate Threshold Voltage: Gate-source threshold voltage (V_GS(th)) range is 2V to 4V, allowing for compatibility with various gate drive levels.
5. Package Type: Available in DPAK (TO-252) package, facilitating easy thermal management and PCB integration.
6. Fast Switching Speed: Suitable for high-frequency applications, enhancing overall system performance.
7. Applications: Commonly used in DC-DC converters, motor drivers, and switch-mode power supplies.
These features make the STP80NF55-08 an efficient choice for power management in both consumer and industrial electronics.

Package

The STP80NF55-08 is typically available in a TO-220 package type, which is a three-lead package used for power transistors.

Pinout

The STP80NF55-08 is an N-channel MOSFET with a pin count of 3. The pins are designated as follows:
1. Gate (G): This pin is used to control the MOSFET; applying a voltage here allows current to flow between the drain and source.
2. Drain (D): This is the terminal where the load is connected; current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative side of the circuit; it is where the current leaves the MOSFET.
The device is known for its low on-state resistance and high current handling capabilities, making it suitable for applications in power management and switching.

Manufacturer

The STP80NF55-08 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs and produces a wide range of semiconductor products, including microcontrollers, sensors, and power management devices. The company serves various markets, including automotive, industrial, personal electronics, and communications. Established in 1987, STMicroelectronics is known for its innovation and commitment to providing advanced technologies for a wide array of applications.

Application

The STP80NF55-08 is a N-channel MOSFET commonly used in various applications, including power management systems, DC-DC converters, motor drivers, and lighting control. It is suitable for high-efficiency switching applications due to its low on-resistance and fast switching capabilities. Additionally, it can be applied in automotive systems, renewable energy systems, and industrial automation for controlling loads and enhancing energy efficiency.

Equivalent

Equivalent products to the STP80NF55-08 MOSFET include the IRF3205, IRF2807, FQP50N60, and AOD2956. When considering alternatives, check parameters like voltage rating, current rating, RDS(on), and package type to ensure compatibility for your application.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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