STP80NF12

Les images sont à titre de référence seulement

STP80NF12

MOSFET N-CH 120V 80A TO220AB

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Package Tube
Series STripFET™ II
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 120 V
Current-ContinuousDrain(Id)@25°C 80A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 18mOhm @ 40A, 10V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 189 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4300 pF @ 25 V
PowerDissipation(Max) 300W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

Vue d'ensemble

Description

The STP80NF12 is a N-channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage (V_DS) of 120V and a continuous drain current (I_D) of 80A, making it suitable for power management in various electronic devices. Its low on-resistance (R_DS(on)) of approximately 0.04Ω at a gate-source voltage (V_GS) of 10V enables efficient operation, minimizing power loss and heat generation.
The STP80NF12 is commonly used in switching power supplies, motor drivers, and other applications where high efficiency and fast switching speeds are required. It is housed in a TO-220 package, facilitating easy thermal management and heat dissipation. This MOSFET is controlled by a voltage applied to its gate, allowing for effective modulation of the current flow between the drain and source terminals.
Overall, the STP80NF12 is valued for its reliability, high current capacity, and versatility in various electronic circuits.

Features

The STP80NF12 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications in power management and switching. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 120V.
2. Current Rating: Continuous drain current (I_D) of 80A at 25°C, making it suitable for high-current applications.
3. On-State Resistance: Low R_DS(on) of approximately 0.018 ohms (at V_GS = 10V), which ensures minimal power loss during operation.
4. Switching Speed: Fast switching capabilities, enhancing efficiency in applications such as power supplies and motor drives.
5. Thermal Performance: High maximum junction temperature of 175°C, allowing for reliable operation in demanding environments.
6. Package: Available in TO-220 and DPAK packages for easy integration into various circuit designs.
These features make the STP80NF12 suitable for applications like DC-DC converters, inverters, and other power electronics requiring efficient switching and handling of high power.

Package

The STP80NF12 is typically packaged in a TO-220 package type. This package provides good thermal performance and is suitable for power applications.

Pinout

The STP80NF12 is an N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.

2. Drain (D): This pin is connected to the load. Current flows from the drain to the source when the MOSFET is turned on.

3. Source (S): This pin is connected to ground or the negative side of the circuit. It is the output for the current flowing from the drain when the MOSFET is activated.
The STP80NF12 is designed for use in power management applications, with a maximum continuous drain current of 80A and a drain-source voltage of 120V. Its low on-resistance makes it suitable for high-efficiency switching applications.

Manufacturer

The STP80NF12 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for designing and manufacturing a wide range of semiconductor solutions, including analog, digital, and mixed-signal devices. The company serves various markets such as automotive, industrial, personal electronics, and communications. With a strong focus on innovation and sustainability, STMicroelectronics is recognized for its commitment to developing energy-efficient and environmentally friendly technologies.

Application

The STP80NF12 is a N-channel MOSFET used in various applications, including power management, DC-DC converters, motor drivers, and switching power supplies. Its high current handling and low on-resistance make it suitable for automotive applications, power inverters, and amplifiers in audio equipment. Additionally, it is employed in industrial automation and LED lighting systems for efficient switching and control.

Equivalent

Equivalent products to the STP80NF12 MOSFET include the IRF3205, FQD12N80, and AOD5N80. These alternatives typically offer similar voltage and current ratings, but always check specific datasheets for exact specifications to ensure compatibility in your application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire