STP57N65M5

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STP57N65M5

MOSFET N-CH 650V 42A TO220

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Spécifications

Package Tube
Series MDmesh™ V
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 42A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 63mOhm @ 21A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 98 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 4200 pF @ 100 V
PowerDissipation(Max) 250W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

Vue d'ensemble

Description

The STP57N65M5 is a high-voltage N-channel MOSFET designed for use in power applications. It features a maximum drain-source voltage (VDS) of 650V and a continuous drain current (ID) of 57A, making it suitable for high-power switching applications. The device exhibits low on-resistance (RDS(on)) of around 0.065 ohms, which minimizes conduction losses and enhances efficiency.
Its fast switching capabilities make it ideal for use in power supplies, motor drives, and other applications requiring rapid switching. The STP57N65M5 comes in a TO-220 package, facilitating easy heat dissipation and mounting in various circuit designs.
Additionally, the device has built-in protection features such as avalanche rating, making it robust against voltage spikes. Applications include industrial equipment, renewable energy systems, and automotive power management. Overall, the STP57N65M5 is valued for its reliability and performance in demanding power environments.

Features

The STP57N65M5 is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (ID) is rated at 57A, allowing for significant load handling capacity.
3. RDS(on): It features a low on-resistance (RDS(on)) of approximately 0.15 ohms, which helps reduce power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) ranges from 2V to 4V, enabling efficient drive from standard logic levels.
5. Thermal Resistance: The package has a low thermal resistance, which aids in effective heat dissipation.
6. Packaging: Available in a TO-220 package, it facilitates easy mounting and heat sinking.
These characteristics make the STP57N65M5 ideal for applications in power supplies, motor drives, and converters.

Package

The STP57N65M5 is typically available in a TO-220 package type. This package features three leads and is designed for high power applications, providing effective heat dissipation.

Pinout

The STP57N65M5 is an N-channel power MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. It receives the input signal that turns the device on or off.
2. Drain (D): This pin is connected to the load. It allows current to flow from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for the current flowing through the load.
The STP57N65M5 can handle high voltages (up to 650V) and high currents (57A), making it suitable for applications in power electronics such as switch-mode power supplies and automotive systems.

Manufacturer

The STP57N65M5 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs and produces a wide range of semiconductor solutions, including analog, digital, and mixed-signal devices, as well as microcontrollers, sensors, and power management chips. The company serves various markets such as automotive, industrial, personal electronics, and communication. STMicroelectronics is known for its focus on innovation and technology development, and it plays a significant role in the advancement of the electronics industry.

Application

The STP57N65M5 is a high-voltage N-channel MOSFET used primarily in power management applications. Its main application areas include switch-mode power supplies (SMPS), motor control circuits, LED drivers, and high-efficiency power converters. It is suitable for industrial automation, automotive applications, and renewable energy systems due to its low on-resistance and high current handling capabilities.

Equivalent

Equivalent products to the STP57N65M5 MOSFET include the IRF3205, IRF2710, and PSMN2R5-80BSF. These alternatives have similar voltage and current ratings, making them suitable for similar applications. Always verify the specific parameters and package compatibility before substitution.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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