STP4NK60Z

Les images sont à titre de référence seulement

STP4NK60Z

MOSFET N-CH 600V 4A TO220AB

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Package Tube
Series SuperMESH™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 4A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 2Ohm @ 2A, 10V
Vgs(th)(Max)@Id 4.5V @ 50µA
GateCharge(Qg)(Max)@Vgs 26 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 510 pF @ 25 V
PowerDissipation(Max) 70W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

Vue d'ensemble

Description

The STP4NK60Z is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 4A. It is commonly used in power management systems, such as switch-mode power supplies, inverters, and motor drivers.
This MOSFET features a low on-state resistance (R_DS(on)), which results in efficient power conversion and reduced heat generation during operation. Its fast switching speed makes it suitable for high-frequency applications. The device is housed in a TO-220 package, ensuring good thermal performance and easy mounting on heat sinks.
Key parameters include a gate threshold voltage (V_GS(th)) typically between 2-4V, ensuring compatibility with low-voltage drive circuits. The STP4NK60Z is a reliable choice for engineers seeking robust performance in high-voltage environments.

Features

The STP4NK60Z is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage circuits.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 4A.
3. On-Resistance: Low on-resistance (R_DS(on)) of 0.5 ohms at V_GS = 10V, which helps reduce power losses during operation.
4. Gate Threshold Voltage: V_GS(th) ranges from 2V to 4V, allowing for efficient control and switching.
5. Fast Switching Speed: Optimized for high-frequency applications, improving efficiency in power conversion.
6. Package Type: Available in a TO-220 package, facilitating heat dissipation and ease of mounting.
These features make the STP4NK60Z suitable for applications in power supplies, motor drives, and other electronic devices that require reliable switching performance and efficiency.

Package

The STP4NK60Z is typically packaged in a TO-220 package, which is a popular type of package for power MOSFETs due to its good thermal performance and ease of heat sinking.

Pinout

The STP4NK60Z is an N-channel MOSFET with a total of 4 pins. Its pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET's switching function. Applying a voltage to this gate allows current to flow from the drain to the source.
2. Drain (D): This pin is where the current flows out of the MOSFET. It connects to the load.
3. Source (S): This pin is the terminal through which current enters the MOSFET. It is typically connected to ground in low-side switching applications.
4. Body Diode: Although not a pin, the internal body diode allows current to flow from the source to the drain when the device is reverse biased.
The STP4NK60Z is designed for applications like power management and switching in various electronic devices, offering high voltage and current handling capabilities.

Manufacturer

The STP4NK60Z is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, manufactures, and markets a wide range of semiconductor products used in various applications, including automotive, industrial, and consumer electronics. The company is known for its innovative technology and is one of the largest semiconductor manufacturers in Europe. STMicroelectronics focuses on providing solutions for energy efficiency, connectivity, and smart applications, catering to a diverse array of markets.

Application

The STP4NK60Z is an N-channel MOSFET primarily used in various applications such as power management circuits, motor control, switch-mode power supplies (SMPS), and lighting dimmers. It is also suitable for use in high-frequency and high-voltage applications due to its low on-resistance and high breakdown voltage, making it ideal for automotive, industrial, and consumer electronics.

Equivalent

The STP4NK60Z is a N-channel MOSFET. Equivalent products include:
1. IRF740
2. FQPF4N60
3. AUIRF840
4. MTP4N60E
5. STP4N60
Always check the datasheets for specific ratings and characteristics to ensure compatibility in your application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire