STP4N150

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STP4N150

MOSFET N-CH 1500V 4A TO220AB

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Spécifications

Package Tube
Series PowerMESH™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1500 V
Current-ContinuousDrain(Id)@25°C 4A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 7Ohm @ 2A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 50 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1300 pF @ 25 V
PowerDissipation(Max) 160W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

Vue d'ensemble

Description

The STP4N150 is a silicon power transistor designed for high-voltage applications. It belongs to the family of N-channel MOSFETs, specifically suited for switching and amplification tasks in electronic circuits. With a maximum drain-source voltage (V_DS) of 150V and a continuous drain current (I_D) of 4A, it is ideal for power management in various devices, including power supplies and motor controllers.
The STP4N150 features low on-resistance, allowing efficient performance with minimal heat generation, which is crucial for enhancing the reliability of electronic systems. Its package design, often in TO-220 or similar configurations, facilitates effective heat dissipation.
Due to its robust specifications, the STP4N150 is commonly used in applications such as industrial drives, automotive electronics, and consumer electronics. When selecting this transistor, it is essential to consider thermal management and ensure that it operates within safe limits to prevent damage.

Features

The STP4N150 is a high-voltage N-channel power MOSFET designed for various applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 150V, allowing it to handle high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of up to 4A, suitable for medium power needs.
3. R_DS(on): Low on-resistance (approximately 0.8Ω), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 2V to 4V, allowing for easy drive with standard logic levels.
5. Fast Switching: Designed for high-speed operation, making it ideal for switching applications.
6. Package Type: Available in TO-220 and other packages for versatile mounting options.
7. Thermal Resistance: Low thermal resistance ensures effective heat dissipation.
These features make the STP4N150 suitable for power supply circuits, motor drivers, and other high-voltage applications.

Package

The STP4N150 is typically packaged in a TO-220 format, which is a standard package for power devices, providing good thermal performance and electrical connections.

Pinout

The STP4N150 is a power N-channel MOSFET with a total of three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage between the gate and the source turns the device on, allowing current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the load current flows when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply in low-side switching configurations.
The STP4N150 is designed to handle high voltage and current applications, with a maximum V_DS of 150V and a continuous drain current (I_D) of 4A. It is commonly used in power switching applications, such as in power supplies and motor control circuits.

Manufacturer

The STP4N150 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for designing, developing, and manufacturing a wide range of semiconductor products, including discrete components, integrated circuits, and sensors. The company serves various markets, including automotive, industrial, consumer electronics, and telecommunications. Established in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is recognized for its innovation and commitment to providing solutions for energy efficiency and smart technologies.

Application

The STP4N150 is a high-voltage N-channel MOSFET used in various applications, including:
1. Power Supplies: For switching and regulation.
2. Motor Control: In driving various types of motors.
3. Industrial Equipment: In automation and control systems.
4. Lighting Systems: For LED and other lighting applications.
5. Consumer Electronics: In power management circuits.
Its high voltage and current capabilities make it suitable for these diverse applications.

Equivalent

Equivalent products to the STP4N150 MOSFET include:
1. IRF150
2. MTP4N150E
3. SI9872BDY
4. FQP4N150
Always check specific datasheets for electrical characteristics to ensure compatibility.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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