STP3NK80Z

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STP3NK80Z

MOSFET N-CH 800V 2.5A TO220AB

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Spécifications

Supplier STMicroelectronics
Package Tube
Series SuperMESH™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 800 V
Current-ContinuousDrain(Id)@25°C 2.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 4.5Ohm @ 1.25A, 10V
Vgs(th)(Max)@Id 4.5V @ 50µA
GateCharge(Qg)(Max)@Vgs 19 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 485 pF @ 25 V
PowerDissipation(Max) 70W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

Vue d'ensemble

Description

The STP3NK80Z is a high-voltage N-channel MOSFET designed for power electronics applications. It features a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 3A, making it suitable for high-voltage switching applications. The device has a low gate threshold voltage and low on-resistance, which contributes to its efficiency in power management tasks.
This MOSFET is typically used in applications such as power supplies, motor drivers, and converters. It is housed in a TO-220 package, allowing for effective heat dissipation. The STP3NK80Z is known for its robustness, high-speed switching capabilities, and versatility, making it a popular choice among engineers designing power circuits.
For proper usage, attention must be paid to thermal management and gate driving requirements to ensure optimal performance and reliability in various electronic applications.

Features

The STP3NK80Z is a N-channel MOSFET designed for high-voltage applications. Its key features include:
1. Voltage Rating: Capable of handling a maximum drain-source voltage (VDS) of 800V.
2. Continuous Drain Current: Supports a continuous current of up to 3A at a specified temperature.
3. Low On-Resistance: It has a low RDS(on) rating, which improves efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: Designed with a low gate threshold voltage for easy drive capabilities.
5. Thermal Stability: Features a robust package that allows for efficient heat dissipation, contributing to thermal stability.
6. Fast Switching: Provides high-speed switching performance, making it suitable for applications in power supplies and motor control.
Overall, the STP3NK80Z is ideal for applications requiring high voltage and efficiency, including switch-mode power supplies and inverters.

Package

The STP3NK80Z is typically packaged in a TO-220 format. This package type features a metal tab for heat dissipation, making it suitable for high-power applications.

Pinout

The STP3NK80Z is an N-channel MOSFET from STMicroelectronics, featuring a TO-220 package with a pin count of 3. The pin configuration and their functions are as follows:
1. Gate (G) - This terminal is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D) - This terminal is where the current enters the MOSFET when it is turned on.
3. Source (S) - This terminal is where the current exits the MOSFET.
This device is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) rating of 3A. It is suitable for use in various applications, including power supplies, motor control, and lighting systems.

Manufacturer

The STP3NK80Z is manufactured by Nexperia, a company that specializes in discrete, logic, and MOSFET components. Nexperia was formed as a spin-off from NXP Semiconductors and focuses on providing highly reliable semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The STP3NK80Z is a high-voltage N-channel MOSFET, suitable for power management and switching applications. Nexperia is known for its commitment to quality and fast delivery, offering a wide range of products to meet the needs of its global customer base.

Application

The STP3NK80Z is an N-channel MOSFET primarily used in power applications, such as switch-mode power supplies, motor control, and inverters. Its features make it suitable for high-voltage applications, including industrial equipment, lighting control, and automotive power management systems. It is often utilized in circuits requiring efficient power switching and amplification.

Equivalent

The STP3NK80Z is an N-channel MOSFET. Equivalent products include:
1. IRF840
2. FQP30N80C
3. MTP3N80
4. APT3N80
5. PSMN3R8-80BSF
Always verify specifications such as voltage, current, and package type before substituting.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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