STP35N65DM2

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STP35N65DM2

MOSFET N-CH 650V 32A TO220

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Spécifications

Series MDmesh™ DM2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56.3 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2540 pF @ 100 V
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number STP35

Vue d'ensemble

Description

The STP35N65DM2 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high voltage and high current applications. It has a voltage rating of 650V and a continuous drain current of up to 35A, making it suitable for power management in various electronic circuits, including switch-mode power supplies and motor control applications.
Key features include a low on-resistance (R_DS(on)) of about 0.18 Ω, which enhances efficiency by minimizing power losses during operation. The device is housed in a TO-220 package, facilitating easy heat dissipation. It offers fast switching speeds, making it ideal for applications that require rapid response times.
The STP35N65DM2 is often used in automotive applications, industrial power supplies, and renewable energy systems due to its robustness and reliability under high-stress conditions. Overall, it is a versatile component for engineers seeking efficient power management solutions.

Features

The STP35N65DM2 is an N-channel MOSFET designed for high-power applications. Key features include:
- Voltage Rating: 650V maximum drain-source voltage (V_DS).
- Current Rating: Continuous drain current (I_D) of up to 35A.
- R_DS(on): Low on-resistance of approximately 0.07Ω at V_GS = 10V, contributing to efficient power handling.
- Gate Threshold Voltage: Typical V_GS(th) ranges from 2V to 4V, allowing for easy driving.
- Package: Available in a TO-220 package, facilitating effective heat dissipation.
- Switching Performance: Fast switching capabilities, suitable for high-frequency applications.
- Thermal Resistance: Low thermal resistance ensures efficient heat management.
These features make the STP35N65DM2 suitable for applications such as power supplies, motor drives, and DC-DC converters.

Package

The STP35N65DM2 is typically packaged in a TO-220 format. This package type is designed for efficient thermal dissipation and is commonly used in power applications.

Pinout

The STP35N65DM2 is a N-channel MOSFET with a total of 3 pins.
Pin Count: 3 pins
Pin Functions:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate terminal turns the device on or off, allowing current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET from the load. The drain is connected to the load side of the circuit.
3. Source (S): This pin is connected to ground or the negative side of the power supply. It serves as the return path for the current flowing through the device.
The STP35N65DM2 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 650V and can handle a continuous drain current of up to 35A.

Manufacturer

The STP35N65DM2 is manufactured by STMicroelectronics, a multinational electronics and semiconductor company. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics specializes in a wide range of semiconductor solutions, including microcontrollers, sensors, power management devices, and analog ICs. The company serves various industries, including automotive, industrial, consumer electronics, and telecommunications, focusing on innovation and sustainability in its product offerings. STMicroelectronics is recognized for its commitment to research and development, enabling advanced technologies in the rapidly evolving electronics market.

Application

The STP35N65DM2 is a N-channel MOSFET commonly used in applications such as power supplies, motor drivers, and high-frequency switching. Its features make it suitable for automotive applications, industrial equipment, and consumer electronics. It is particularly effective in DC-DC converters and power management circuits, where efficient switching performance is crucial.

Equivalent

Equivalent products to the STP35N65DM2 MOSFET include the IRF3205, FQP30N60, and MBRF20U. These alternatives share similar voltage and current ratings, but always verify specifications such as R_DS(on), V_GS(th), and package type before substitution to ensure compatibility for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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