STP34N65M5

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STP34N65M5

MOSFET N-CH 650V 28A TO220

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Spécifications

Series MDmesh™ V
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62.5 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 100 V
Power Dissipation (Max) 190W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number STP34

Vue d'ensemble

Description

The STP34N65M5 is a N-channel MOSFET designed for high-performance power applications. It features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 34A at a specified case temperature. The device is constructed using a trench MOSFET technology, which enhances its switching characteristics and reduces on-resistance (R_DS(on)), making it efficient for power management tasks.
With a low R_DS(on) of approximately 0.34 ohms, the STP34N65M5 minimizes conduction losses, providing greater efficiency in circuits such as power supplies, inverters, and motor drives. The MOSFET also has a fast switching speed, which is essential for applications requiring high-frequency operation.
Additionally, it is housed in a TO-220 package, facilitating easy heat dissipation and mounting. The device is suitable for various applications, including industrial automation, automotive, and renewable energy systems, where reliability and efficiency are critical.

Features

The STP34N65M5 is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: 650V maximum drain-source voltage (Vds), suitable for high-voltage applications.
2. Current Rating: Continuous drain current (Id) up to 34A, allowing for substantial load handling.
3. On-Resistance: Low Rds(on) of 0.55Ω at Vgs = 10V, which reduces power losses during operation.
4. Gate Threshold Voltage: Vgs(th) between 2V to 4V, enabling efficient switching.
5. Package Type: Available in TO-220 and DPAK packages, providing flexibility for different designs.
6. Fast Switching: Optimized for low gate charge (Qg) for rapid switching capabilities, enhancing efficiency in converters and inverters.
7. Thermal Characteristics: Good thermal performance which allows for reliable operation at elevated temperatures.
These features make the STP34N65M5 suitable for various applications, including power supplies, motor drives, and other high-voltage switching applications.

Package

The STP34N65M5 is typically available in a TO-220 package type. This package provides good thermal performance and is suitable for high-power applications.

Pinout

The STP34N65M5 is a N-channel MOSFET with a pin count of 3. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the switching of the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is connected to the load and serves as the output terminal. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative terminal of the power supply. It serves as the input terminal for current flow when the MOSFET is activated.
The STP34N65M5 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of up to 34A.

Manufacturer

The STP34N65M5 is manufactured by STMicroelectronics, a multinational electronics and semiconductor company. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics specializes in producing a wide range of semiconductor products, including integrated circuits, discrete devices, and sensors. The company serves various sectors, such as automotive, industrial, consumer electronics, and communication, focusing on innovative solutions that enhance performance and efficiency in electronic applications. STMicroelectronics is known for its advanced technology and commitment to sustainability.

Application

The STP34N65M5 is a N-channel MOSFET widely used in applications such as power supplies, motor drives, and industrial automation. Its high voltage and current handling capabilities make it suitable for switch-mode power supplies (SMPS), DC-DC converters, and inverters. It is also employed in automotive electronics, lighting control, and various other power management circuits due to its efficiency and thermal performance.

Equivalent

The STP34N65M5 is a N-channel MOSFET with a voltage rating of 650V and a current rating of 34A. Equivalent products include:
1. IRF840 - N-channel MOSFET, 500V, 8A
2. FQP30N60 - N-channel MOSFET, 600V, 30A
3. MTP34N65 - N-channel MOSFET, 650V, 34A
4. BTA34-600V - N-channel MOSFET, 600V, 34A
Always check the specifications to ensure compatibility with your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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