STP33N60M2

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STP33N60M2

MOSFET N-CH 600V 26A TO220

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Spécifications

Package Tube
Series MDmesh™ II Plus
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 26A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 125mOhm @ 13A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 45.5 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 1781 pF @ 100 V
PowerDissipation(Max) 190W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

Vue d'ensemble

Description

The STP33N60M2 is a high-voltage N-channel MOSFET designed for power applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 33A at a case temperature of 25°C. The device is known for its low on-resistance (R_DS(on)), typically around 0.19Ω, which helps in reducing power losses during operation.
This MOSFET is suitable for various applications, including switch-mode power supplies, motor drives, and industrial equipment. With a fast switching speed, it enhances efficiency in high-frequency applications. The STP33N60M2 is housed in a TO-220 package, facilitating effective thermal management with a robust design for heat dissipation.
Overall, the STP33N60M2 balances high performance with reliability, making it a popular choice among engineers for power management tasks. Always refer to the specific datasheet for detailed electrical characteristics and application guidelines.

Features

The STP33N60M2 is a N-channel power MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (Vds) of 600V, suitable for high-voltage circuits.
2. Current Rating: Continuous drain current (Id) of 33A at a case temperature of 25°C, allowing for substantial load handling.
3. RDS(on): Low on-resistance of approximately 0.18 Ω, which minimizes power losses during operation.
4. Gate Threshold Voltage (Vgs(th)): Typically between 2V to 4V, enhancing compatibility with low-voltage control signals.
5. Fast Switching: Designed for rapid switching, making it ideal for applications such as switch-mode power supplies and motor drives.
6. Package: Available in a TO-220 package, which allows for effective heat dissipation.
7. Robustness: Features a high avalanche capability, enhancing reliability in harsh conditions.
These characteristics make the STP33N60M2 suitable for various applications, including power converters, inverters, and industrial equipment.

Package

The STP33N60M2 is typically available in a TO-220 package type. This package is designed for power applications, providing efficient heat dissipation and easy mounting on heatsinks.

Pinout

The STP33N60M2 is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows the device to switch on, enabling current to flow from the drain to the source.
2. Drain (D): This is the pin where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the circuit. It serves as the reference point for the gate voltage.
The STP33N60M2 is rated for a maximum drain-source voltage of 600V and has a continuous drain current rating of 33A, making it suitable for high-voltage applications.

Manufacturer

The STP33N60M2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs and produces a wide range of semiconductor solutions, including microcontrollers, sensors, power management devices, and discrete components. Founded in 1987, the company is headquartered in Geneva, Switzerland, and operates in various sectors such as automotive, industrial, consumer electronics, and communication. STMicroelectronics is known for its innovation and commitment to sustainability, emphasizing energy efficiency and performance in its product offerings. The STP33N60M2 itself is a N-channel MOSFET designed for high-voltage applications, suitable for use in power supplies and motor control systems.

Application

The STP33N60M2 is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its key areas include switch-mode power supplies (SMPS), motor drivers, industrial power control, DC-DC converters, and inverters for renewable energy systems. Its high voltage and low on-resistance characteristics make it suitable for efficient power management in various consumer and industrial applications.

Equivalent

The STP33N60M2 is a 600V N-channel MOSFET. Equivalent products include:
1. IRF320 - 550V, similar R_DS(on).
2. MTP33N60E - 600V, low gate charge.
3. FQP33N60C - 600V, enhanced performance.
4. STP40N60 - 600V, slightly higher R_DS(on).
5. SiHF33N60 - 600V, high-speed switching.
Always check specifications for voltage, current, and thermal performance before substitution.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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