STP26NM60N

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STP26NM60N

MOSFET N-CH 600V 20A TO220AB

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Spécifications

Package Tube
Series MDmesh™ II
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 20A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 165mOhm @ 10A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 60 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1800 pF @ 50 V
PowerDissipation(Max) 140W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

Vue d'ensemble

Description

The STP26NM60N is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-performance switching applications. It features a voltage rating of 600V and a continuous drain current of 26A, making it suitable for use in power supply circuits, motor controls, and other high-voltage applications.
Key specifications include a low on-resistance (RDS(on)) of approximately 0.26 ohms, which minimizes power loss and heat generation during operation. The MOSFET can be driven with a gate voltage typically between 10V to 20V, allowing for efficient switching.
The device is housed in a TO-220 package, which aids in heat dissipation and is compatible with standard PCB mounting practices. Its fast switching capabilities make it ideal for applications such as converters, inverters, and other power management systems. Overall, the STP26NM60N is valued for its reliability and efficiency in demanding environments.

Features

The STP26NM60N is an N-channel MOSFET designed for high-performance applications. Key features include:
- Voltage Rating: Rated for a maximum drain-source voltage (VDS) of 600V, making it suitable for high-voltage applications.
- Continuous Drain Current: Offers a maximum continuous drain current (ID) of 26A at a case temperature of 25°C.
- RDS(on): Low on-resistance (RDS(on)) of approximately 0.18 ohms, ensuring efficient power handling and minimized losses.
- Gate Threshold Voltage: Gate-source threshold voltage (VGS(th)) ranges from 2 to 4V, allowing for easier drive circuit compatibility.
- Fast Switching: Designed for low gate charge (Qg), enabling fast switching speeds which enhance overall system efficiency.
- Package: Available in a TO-220 package, facilitating heat dissipation and ease of mounting.
These features make the STP26NM60N ideal for applications such as power supplies, motor control, and other high-voltage switching applications.

Package

The STP26NM60N is typically available in a TO-220 package type. This package is designed for efficient heat dissipation and is commonly used in power devices like MOSFETs.

Pinout

The STP26NM60N is an N-channel MOSFET with a pin count of three. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D) - This pin is where the current enters the MOSFET when it is in the "on" state.
3. Source (S) - This pin is where the current exits the MOSFET. It is typically connected to ground in low-side switching applications.
The STP26NM60N is designed for high-voltage applications, with a maximum drain-source voltage of 600V and a continuous drain current of 26A. It is commonly used in power management, switching applications, and motor control.

Manufacturer

The STP26NM60N is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, and manufactures a wide range of semiconductor products, including power transistors, microcontrollers, and sensors, among others. The company serves various industries, including automotive, industrial, consumer, and communications, with a strong emphasis on innovation and sustainability. Established in 1987, STMicroelectronics is headquartered in Geneva, Switzerland, and operates numerous manufacturing and R&D facilities worldwide. It is known for its commitment to quality and technological advancement.

Application

The STP26NM60N is a N-channel MOSFET primarily used in power applications due to its high voltage and current handling capabilities. Common application areas include switching power supplies, motor control, and lighting control circuits. It is also utilized in inductive load switching, power management systems, and various electronic devices requiring efficient energy conversion and management.

Equivalent

The STP26NM60N is a 600V N-channel MOSFET. Equivalent products include:
1. IRF260
2. MTP26N60E
3. APT26M60J
4. FQP26N60
5. PSMN2R6-60B
Always verify specifications like RDS(on), gate charge, and package type to ensure compatibility for your specific application.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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