STP24N60DM2

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STP24N60DM2

MOSFET N-CH 600V 18A TO220

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Spécifications

Series FDmesh™ II Plus
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1055 pF @ 100 V
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number STP24

Vue d'ensemble

Description

The STP24N60DM2 is a high-voltage N-channel Power MOSFET designed for efficient power conversion applications. Manufactured by STMicroelectronics, this device is part of the MDmesh DM2 series, known for its low on-resistance and fast switching capabilities. It features a breakdown voltage of 600V and a continuous drain current of 24A, making it suitable for a variety of demanding applications, including switching power supplies, lighting systems, and motor control.
Key characteristics include a low gate charge and excellent switching performance, which contribute to reduced energy loss and increased efficiency. The STP24N60DM2 also incorporates a fast-recovery body diode, enhancing its performance in hard-switching conditions. The device is typically housed in a TO-220 package, providing good thermal performance and ease of mounting.
Overall, the STP24N60DM2 is a robust and reliable MOSFET, offering a balance of performance and efficiency suitable for high-voltage power management applications. Its advanced technology ensures optimized conduction and switching losses, making it a popular choice for engineers and designers working in power electronics.

Features

The STP24N60DM2 is a power MOSFET from STMicroelectronics, designed for high-efficiency applications. Key features include:
1. Voltage and Current Ratings: It supports a drain-to-source voltage (V_ds) of 600V and a continuous drain current (I_d) of 24A, making it suitable for high-voltage applications.
2. Low On-Resistance: The device has a low on-state resistance (R_ds(on)), ensuring minimal power loss and high efficiency.
3. Fast Switching: Its rapid switching capabilities enhance efficiency in various switching applications, reducing switching losses.
4. Robust Design: The MOSFET features an avalanche ruggedness and high dv/dt capability, ensuring reliability under demanding conditions.
5. Package: Typically available in a TO-220 package, it provides ease of mounting and efficient heat dissipation.
6. Applications: Commonly used in power supplies, converters, and motor control circuits due to its high efficiency and reliability.
These features make the STP24N60DM2 suitable for various industrial and consumer electronic devices requiring high efficiency and reliability in power management.

Package

The STP24N60DM2 is a power MOSFET, and its package type is TO-220. This package is commonly used for high-power and high-voltage applications, providing good thermal performance and heat dissipation.

Pinout

The STP24N60DM2 is a power MOSFET from STMicroelectronics, specifically designed for high-voltage applications. It is part of the MDmesh DM2 series, which is known for its efficiency and fast switching capabilities.
Regarding the pin count and function:
1. Pin Count: The STP24N60DM2 is typically available in a TO-220 package, which has 3 pins.
2. Pin Functions:
- Gate (G): This is the control terminal used to turn the MOSFET on or off. Applying a voltage to the gate enables current flow between the drain and source.
- Drain (D): When the MOSFET is turned on, current flows from the drain to the source if the device is in an N-channel configuration.
- Source (S): This terminal is connected to the ground or the lower potential in an N-channel MOSFET. It acts as the return path for the current flowing through the drain.
The STP24N60DM2 is typically used in applications such as power supplies, converters, and motor controllers due to its high voltage and current handling capabilities.

Manufacturer

The STP24N60DM2 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products and solutions. It is recognized for its innovation and comprehensive portfolio, which serves various sectors, including automotive, industrial, personal electronics, and communications equipment. The company is known for its focus on sustainability and technological advancements in the semiconductor industry.

Application

The STP24N60DM2 is a power MOSFET commonly used in applications such as power supply units, motor drives, LED lighting, and industrial power control systems. Its features, like high voltage tolerance and efficiency, make it suitable for switching operations in converters and inverters. Additionally, it can be used in applications requiring reliable high-speed switching and low energy losses.

Equivalent

The STP24N60DM2 is a 600V, 24A N-channel MOSFET. Possible equivalents include the IRFP460, FDPF12N60NZ, and FQP24N60, among others. Ensure compatibility by checking the voltage, current ratings, Rds(on), and package type. Always refer to the datasheets for detailed specifications to confirm equivalency.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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