STP20NM60

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STP20NM60

MOSFET N-CH 600V 20A TO220AB

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Spécifications

Series MDmesh™
Part Status Active
Base Product Number STP20
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 25 V
Power Dissipation (Max) 192W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package TO-220-3
Packaging Tube

Vue d'ensemble

Description

The STP20NM60 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. With a maximum drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 20A, it is suitable for power management in various electronic circuits, including switch-mode power supplies, motor drives, and lighting control.
Key features of the STP20NM60 include low on-resistance (RDS(on)), which reduces power losses and improves efficiency, and a fast switching capability that enhances performance in high-frequency applications. Its TO-220 package allows for effective heat dissipation, making it ideal for applications that require thermal management.
This device is commonly used in automotive, industrial, and consumer electronics due to its reliability and robust performance. Overall, the STP20NM60 is a versatile choice for engineers seeking efficient and effective solutions in high-voltage power switching applications.

Features

The STP20NM60 is an N-channel power MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: 600V maximum drain-source voltage (V_DS), making it suitable for high-voltage circuits.

2. Current Handling: Continuous drain current (I_D) of 20A, allowing it to manage substantial loads.
3. On-Resistance: Low R_DS(on) of 0.24 ohms at V_GS = 10V, which minimizes power losses during operation.
4. Gate Threshold Voltage: V_GS(th) typically around 2-4V, enabling efficient switching.
5. Fast Switching: Capable of high-speed operation due to low gate charge (Q_g), enhancing overall efficiency.
6. TO-220 Package: Available in a robust TO-220 package for effective thermal management and easy mounting.
7. Application Versatility: Commonly used in power supplies, motor drives, and other applications requiring high efficiency and reliability.
These attributes make the STP20NM60 a reliable choice for power management in various electronic devices.

Package

The STP20NM60 is typically packaged in a TO-220 format. This package type is designed for high-power applications, allowing for effective heat dissipation and easy mounting on heatsinks.

Pinout

The STP20NM60 is a N-channel MOSFET designed for high-voltage applications. It features a total of three pins:
1. Gate (G) - Pin for controlling the MOSFET; it receives the voltage signal that turns the device on or off.
2. Drain (D) - Pin through which the current flows out of the MOSFET; it connects to the load.
3. Source (S) - Pin where the current enters the MOSFET; it typically connects to ground or the negative side of the voltage supply.
The STP20NM60 is rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 20A. It is commonly used in applications such as switch mode power supplies, motor control, and inverters due to its high voltage and current handling capabilities.

Manufacturer

The STP20NM60 is manufactured by STMicroelectronics, a multinational electronics and semiconductor company. STMicroelectronics is a leading supplier of semiconductor solutions, providing a wide range of products including microcontrollers, sensors, analog ICs, and power transistors. The company serves various markets such as automotive, industrial, personal electronics, and communications. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics focuses on innovation, sustainability, and advanced technology development, playing a significant role in the global semiconductor industry.

Application

The STP20NM60 is a high-voltage N-channel MOSFET primarily used in power electronics applications, including switching power supplies, motor drives, and industrial automation. Its features make it suitable for inverter circuits, lighting control, and energy conversion systems. Additionally, it is utilized in applications requiring high efficiency and reliability, such as DC-DC converters and electronic ballasts.

Equivalent

The STP20NM60 is a N-channel MOSFET with a 600V drain-source voltage rating and a 20A continuous drain current. Equivalent products include the IRF840, MTP20N60E, and FQP20N60. Ensure to check the specifications for on-resistance, gate threshold voltage, and package type to confirm compatibility for your specific application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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