STP12N120K5

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STP12N120K5

MOSFET N-CH 1200V 12A TO220

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Spécifications

Supplier STMicroelectronics
Package Tube
Series MDmesh™ K5
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1200 V
Current-ContinuousDrain(Id)@25°C 12A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 690mOhm @ 6A, 10V
Vgs(th)(Max)@Id 5V @ 100µA
GateCharge(Qg)(Max)@Vgs 44.2 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1370 pF @ 100 V
PowerDissipation(Max) 250W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

Vue d'ensemble

Description

The STP12N120K5 is a high-voltage N-channel MOSFET designed for various power applications, including switching and amplifying signals. It features a maximum drain-source voltage (V_DS) of 120V and a continuous drain current (I_D) rating of 12A, making it suitable for high-power designs.
Key specifications include a low on-resistance (R_DS(on)), which enhances efficiency by reducing power losses during operation. The device also has a fast switching speed, allowing it to operate effectively in high-frequency applications. The STP12N120K5 is housed in a TO-220 package, facilitating thermal management and providing good heat dissipation.
Typical applications for this MOSFET include power supplies, motor drivers, and converters, where reliable performance and efficiency are crucial. Overall, the STP12N120K5 is an excellent choice for engineers seeking robust and efficient solutions in high-voltage environments.

Features

The STP12N120K5 is a N-channel power MOSFET manufactured by STMicroelectronics. Key features include:
1. Voltage Rating: It has a breakdown voltage of 120V, suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current of up to 12A, providing robust performance in power applications.
3. RDS(on): The on-state resistance is low (typically around 0.5Ω at VGS = 10V), which helps in reducing power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) ranges from 2V to 4V, allowing for efficient switching.
5. Package Type: It is available in a TO-220 package, facilitating easy heat dissipation and thermal management.
6. Applications: Suitable for use in switching power supplies, motor drivers, and other high-efficiency power management systems.
Overall, the STP12N120K5 is designed for high-performance and efficiency in various electronic applications.

Package

The STP12N120K5 is typically available in a TO-220 package. This package type is designed for efficient heat dissipation and ease of mounting in various electronic applications.

Pinout

The STP12N120K5 is a N-channel MOSFET with a 3-pin configuration. The pin count and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Voltage applied to the gate terminal turns the device on or off.

2. Drain (D): This pin connects to the load and is where the current flows out of the MOSFET when it is in the 'on' state.
3. Source (S): This pin serves as the reference point for the current flow and is typically connected to ground in common-source configurations.
The STP12N120K5 is designed for high-voltage applications (with a maximum drain-source voltage of 120V) and supports high current levels (up to 12A), making it suitable for various power switching applications.

Manufacturer

The STP12N120K5 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor solutions and integrated circuits for various applications, including automotive, industrial, consumer electronics, and communication systems. The company is known for its innovation in power management, microcontrollers, and sensor technologies. Headquartered in Geneva, Switzerland, STMicroelectronics operates worldwide and is a key player in the electronics industry, contributing to advancements in energy efficiency and connectivity.

Application

The STP12N120K5 is a high-voltage N-channel MOSFET primarily used in power applications such as switched-mode power supplies (SMPS), motor control, and industrial automation. Its features make it suitable for high-efficiency switching, high-speed operations, and driving heavy loads in applications like inverters, lighting controls, and audio amplifiers.

Equivalent

Equivalent products to the STP12N120K5 (a 1200V N-channel MOSFET) include the IRF840, STP12N60, and MTP12N120E. However, always check the specific ratings and characteristics, such as R_DS(on), V_GS(th), and package type, to ensure compatibility for your application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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