STP110N10F7

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STP110N10F7

MOSFET N CH 100V 110A TO-220

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Spécifications

Package Tube
Series DeepGATE™, STripFET™ VII
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 110A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 7mOhm @ 55A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 60 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 5500 pF @ 50 V
PowerDissipation(Max) 150W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

Vue d'ensemble

Description

The STP110N10F7 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 110A at a junction temperature of 25°C. With a low on-resistance (R_DS(on)) of approximately 0.011 ohms, it enables efficient power management by minimizing power loss during operation.
This MOSFET is typically used in power supply circuits, motor drivers, and other applications requiring efficient switching and amplification. It supports fast switching speeds, making it suitable for high-frequency applications. The STP110N10F7 is packaged in a TO-220 format, providing good thermal performance and ease of mounting.
Overall, the STP110N10F7 is valued for its robustness, efficiency, and versatility in various electronic applications where reliability and performance are critical.

Features

The STP110N10F7 is a N-channel power MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: 100V, suitable for high-voltage applications.
2. Continuous Drain Current: 110A, providing robust current handling.
3. RDS(on): Low on-resistance, typically 0.0115 ohms, which minimizes conduction losses.
4. Gate Threshold Voltage: 2-4V, allowing for easy drive with low gate voltages.
5. Package Type: Available in TO-220, which facilitates efficient heat dissipation.
6. Fast Switching Speed: Suitable for high-frequency applications.
7. Thermal Characteristics: Good thermal performance with a maximum junction temperature of 150°C.
8. Applications: Ideal for power supplies, motor drives, and DC-DC converters.
This MOSFET combines high efficiency with reliability, making it suitable for various industrial and consumer electronics applications.

Package

The STP110N10F7 is packaged in a TO-220 format. This package type provides efficient thermal management and is suitable for high-power applications.

Pinout

The STP110N10F7 is an N-channel MOSFET with a total of three pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.

2. Drain (D): This pin is where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative terminal of the power supply, serving as the return path for current.
The STP110N10F7 is designed for high-speed switching applications and can handle high currents and voltages, making it suitable for various electronic circuits.

Manufacturer

The STP110N10F7 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs and manufactures a wide range of semiconductor products, including integrated circuits and discrete devices, for various applications in automotive, industrial, consumer electronics, and telecommunications. The company is known for its innovation in power management, microcontrollers, and sensor technologies, and it plays a significant role in the development of smart technology and the Internet of Things (IoT). Headquartered in Geneva, Switzerland, STMicroelectronics operates internationally, serving customers worldwide with a focus on sustainability and advanced solutions.

Application

The STP110N10F7 is a power MOSFET primarily used in applications such as power management, motor drives, DC-DC converters, and switching power supplies. Its high efficiency and low on-resistance make it suitable for automotive, industrial, and consumer electronics applications. It can also be utilized in renewable energy systems, such as solar inverters, and in various high-frequency and high-voltage switching applications.

Equivalent

Equivalent products to the STP110N10F7 MOSFET include the IRF140, IRF320, and FQP13N10. Always verify specific parameters such as voltage, current ratings, and Rds(on) to ensure compatibility with your application.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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