STP100N8F6

Les images sont à titre de référence seulement

STP100N8F6

MOSFET N-CH 80V 100A TO220

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Package Tube
Series STripFET™ F6
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 80 V
Current-ContinuousDrain(Id)@25°C 100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 9mOhm @ 50A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 100 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 5955 pF @ 25 V
PowerDissipation(Max) 176W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

Vue d'ensemble

Description

The STP100N8F6 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for high-efficiency switching applications, particularly in power management systems, including DC-DC converters and motor control circuits.
Key features of the STP100N8F6 include a maximum drain-source voltage (V_DS) of 80V, continuous drain current (I_D) of up to 100A, and a low on-resistance (R_DS(on)) of approximately 6.5 mΩ, which minimizes power loss during operation. Its fast switching speed enhances performance in dynamic applications.
The device is housed in a TO-220 package, providing effective thermal dissipation, which is crucial for maintaining reliability in high-power applications. Its robust construction makes it suitable for automotive and industrial environments.
Overall, the STP100N8F6 is an excellent choice for engineers seeking a reliable MOSFET for high-power applications requiring efficiency and performance.

Features

The STP100N8F6 is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Max Drain-Source Voltage (Vds): 80V, allowing it to handle high voltage applications.
2. Continuous Drain Current (Id): 100A, suitable for heavy-load situations.
3. RDS(on): Low on-resistance of approximately 6.5 mΩ at Vgs = 10V, which minimizes power loss.
4. Gate Threshold Voltage (Vgs(th)): Typically between 2V to 4V, allowing for easy driving.
5. Fast Switching Speed: Ideal for applications that require rapid switching to improve efficiency.
6. Thermal Resistance: Good thermal performance with a TO-220 package, enhancing heat dissipation.
7. Applications: Commonly used in power management, motor drivers, and DC-DC converters.
Overall, the STP100N8F6 is suitable for power electronics requiring high current and efficient performance.

Package

The STP100N8F6 is packaged in a TO-220 type package, which is commonly used for power transistors. This package provides efficient heat dissipation and is suitable for high-power applications.

Pinout

The STP100N8F6 is an N-channel MOSFET from STMicroelectronics, featuring a total of three pins. These pins are typically designated as:
1. Gate (G): This pin receives the control voltage, allowing the MOSFET to turn on or off.
2. Drain (D): The drain pin is where the main current flows out of the device when it is in the 'on' state.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit.
The STP100N8F6 is designed for high-performance applications, with a maximum continuous drain current of 100A and a maximum drain-source voltage of 80V. It is suitable for power management, motor control, and other applications requiring efficient switching.

Manufacturer

The manufacturer of the STP100N8F6 is STMicroelectronics. STMicroelectronics is a global semiconductor company headquartered in Geneva, Switzerland. It specializes in the design, development, manufacturing, and marketing of a wide range of semiconductor products, including microcontrollers, sensors, and power devices. The company serves various sectors such as automotive, industrial, personal electronics, and communication. STMicroelectronics is known for its innovation and commitment to sustainability in the electronics industry.

Application

The STP100N8F6 is a high-performance N-channel MOSFET used in various applications, including power management, DC-DC converters, motor drives, and industrial automation. It is suitable for high-speed switching applications due to its low on-resistance and high current handling capacity. Commonly utilized in power supplies, electric vehicles, and renewable energy systems, it enhances efficiency and thermal performance in electronic circuits.

Equivalent

The STP100N8F6 is a MOSFET typically used in power applications. Equivalent products include the IRF3205, FQP100N10, and MTP100N10. Ensure to verify specifications such as Vds, Id, Rds(on), and package type for compatibility in your application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire