STP100N6F7

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STP100N6F7

MOSFET N-CH 60V 100A TO220

  • Fabricant
  • Mfr. Partie #STP100N6F7
  • Paquet TO-220-3
  • Fiche de données
  • En stock7311

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Spécifications

Package Tube
Series STripFET™ F7
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 5.6mOhm @ 50A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 30 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1980 pF @ 25 V
PowerDissipation(Max) 125W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

Vue d'ensemble

Description

The STP100N6F7 is a high-power N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications, including power management, switching, and amplification in electronic circuits. It features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of 100A, making it suitable for high-performance tasks.
This MOSFET is known for its low on-resistance (R_DS(on)) and fast switching capabilities, which contribute to improved efficiency in power circuits. Its thermal performance is enhanced by the ability to dissipate heat effectively, allowing it to operate at higher power levels without overheating.
The STP100N6F7 is typically packaged in a TO-220 format, facilitating easy heat sinking for better thermal management. Due to its robust characteristics, it's widely used in applications like DC-DC converters, motor drivers, and power inverters, contributing to energy efficiency and reliability in various electronic systems.

Features

The STP100N6F7 is a N-channel power MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various power management applications.

2. Current Handling: The device can handle continuous drain current (I_D) up to 100A, providing robust performance in demanding conditions.
3. On-Resistance: A low R_DS(on) of around 7.5 mΩ minimizes power loss and enhances efficiency, particularly in high-frequency switching applications.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy drive compatibility.
5. Package: The MOSFET is available in a TO-220 package, facilitating efficient heat dissipation.
6. Applications: Suitable for use in automotive, industrial, and consumer electronics power supply applications, including DC-DC converters and motor drivers.
These features make the STP100N6F7 an effective choice for various power management solutions.

Package

The STP100N6F7 is a N-channel MOSFET packaged in a TO-220 format. This package type is designed for high-power applications, providing efficient heat dissipation and ease of mounting on heatsinks.

Pinout

The STP100N6F7 is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.

2. Drain (D): This pin is where the current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is where the current enters the MOSFET.
The STP100N6F7 is designed for applications requiring high efficiency and fast switching, typically used in power management, motor control, and other high-power applications.

Manufacturer

The STP100N6F7 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in the design, development, and production of a wide range of semiconductor solutions, including power transistors, microcontrollers, and integrated circuits for various applications such as automotive, industrial, and consumer electronics. The company is headquartered in Geneva, Switzerland, and operates in multiple countries, serving various sectors by providing innovative and energy-efficient technologies.

Application

The STP100N6F7 is a N-channel MOSFET primarily used in power electronics applications such as DC-DC converters, motor drives, and power management systems. Its high current handling and low on-resistance make it suitable for use in switch-mode power supplies, inverter circuits, and electric vehicle control systems. Additionally, it can be applied in audio amplifiers and industrial automation for efficient switching and signal amplification.

Equivalent

The STP100N6F7 is a N-channel MOSFET. Equivalent products include the IRF140, FQP100N6, and BUK9565-55A. For exact specifications, refer to the datasheets, as parameters like voltage, current, and R_DS(on) may vary. Always confirm compatibility for your specific application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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