STGY50NC60WD

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STGY50NC60WD

IGBT 600V 110A 278W MAX247

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Spécifications

Supplier STMicroelectronics
Package Tube
Series PowerMESH™
ProductStatus Active
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 110 A
Current-CollectorPulsed(Icm) 180 A
Vce(on)(Max)@VgeIc 2.6V @ 15V, 40A
Power-Max 278 W
SwitchingEnergy 365µJ (on), 560µJ (off)
InputType Standard
GateCharge 195 nC
Td(on/off)@25°C 52ns/240ns
TestCondition 390V, 40A, 10Ohm, 15V
ReverseRecoveryTime(trr) 55 ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Vue d'ensemble

Description

The STGY50NC60WD is a silicon carbide (SiC) MOSFET designed for high-performance power applications. With a voltage rating of 600V and a current capacity of 50A, it is optimized for efficiency in various applications, including industrial power supplies, electric vehicles, and renewable energy systems. SiC technology offers superior thermal performance and lower switching losses compared to traditional silicon MOSFETs, enabling higher frequency operation and improved energy efficiency.
Key features include a low on-state resistance, fast switching capabilities, and high thermal conductivity, which contribute to enhanced system reliability and reduced cooling requirements. The STGY50NC60WD is suitable for applications where high efficiency and performance are critical, such as inverters and converters. Its robust design allows for operation in demanding environments, making it a popular choice among engineers seeking to improve the efficiency and performance of power electronic systems.

Features

The STGY50NC60WD is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for various applications, particularly in power electronics. Key features include:
1. Voltage Rating: It has a maximum collector-emitter voltage (Vce) of 600V, making it suitable for medium-voltage applications.
2. Current Rating: It supports a continuous collector current (Ic) of 50A, allowing for substantial power handling.
3. Low On-State Voltage: The device exhibits a low on-state voltage drop, which enhances efficiency and reduces power losses.
4. Fast Switching Speed: Optimized for high-speed switching, it improves performance in applications like inverters and converters.
5. Thermal Management: It features a robust package design that aids in effective heat dissipation, contributing to reliable operation and longevity.
6. Applications: Ideal for industrial drives, motor control systems, and renewable energy systems.
Overall, the STGY50NC60WD is engineered for reliability and efficiency in demanding environments.

Package

The STGY50NC60WD is typically packaged in a TO-220 package type, which is designed for efficient heat dissipation and suitable for power applications.

Pinout

The STGY50NC60WD is a high-voltage IGBT (Insulated Gate Bipolar Transistor) with a pin count of 6. Its primary function is to switch and control electrical power in various applications, such as motor drives and power converters. The device features a high blocking voltage of 600 V and a continuous collector current rating of 50 A.
The pin configuration typically includes:
1. Gate (G): Controls the switching operation.
2. Collector (C): The main terminal for the load current.
3. Emitter (E): The terminal connected to the ground or negative supply.
Additional pins may be used for specific functions like thermal monitoring or other features depending on the package type. Always refer to the specific datasheet for detailed electrical characteristics and applications.

Manufacturer

The STGY50NC60WD is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics is a leading provider of semiconductor solutions that serve a wide range of applications, including automotive, industrial, personal electronics, and communication sectors. The company specializes in analog, mixed-signal, digital, and power semiconductor technologies. STMicroelectronics focuses on innovation and sustainability, offering products that enhance energy efficiency and performance across various markets.

Application

The STGY50NC60WD is a high-voltage IGBT (Insulated Gate Bipolar Transistor) commonly used in applications such as motor drives, induction heating, power inverters, and energy conversion systems. Its features make it suitable for industrial power supplies, renewable energy systems, and high-efficiency switch-mode power supplies.

Equivalent

The STGY50NC60WD is an IGBT (Insulated Gate Bipolar Transistor) with a 600V, 50A rating. Equivalent products include the Infineon IGBT FF50R60KT3, the Mitsubishi MGF50N60, and the ON Semiconductor MBRF50N60. Always ensure to check the specifications for exact ratings and parameters before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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