STGWT60H65DFB

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STGWT60H65DFB

IGBT TRENCH FS 650V 80A TO-3P

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Spécifications

Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 240 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 60A
Power - Max 375 W
Switching Energy 1.09mJ (on), 626µJ (off)
Input Type Standard
Gate Charge 306 nC
Td (on/off) @ 25°C 51ns/160ns
Test Condition 400V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr) 60 ns
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P
Base Product Number STGWT60

Vue d'ensemble

Description

The STGWT60H65DFB is a high-performance N-channel MOSFET designed for use in various power applications, particularly in switch-mode power supplies and motor drives. It features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) capability of up to 60A, making it suitable for high voltage and current applications. The device is known for its low on-resistance (R_DS(on)), which helps in reducing conduction losses and improving overall efficiency.
Its fast switching capabilities allow for effective operation in high-frequency applications, and it typically integrates well with other power management components. The STGWT60H65DFB is packaged in a TO-247 format, providing good thermal performance and ease of heat dissipation. Designed for durability and reliability, it is commonly used in industrial, automotive, and renewable energy systems.

Features

The STGWT60H65DFB is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It offers a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: The device supports continuous drain current (I_D) up to 60A, allowing it to handle significant power loads.
3. R_DS(on): It has a low on-resistance (R_DS(on)) value, ensuring efficient operation with minimal power loss during switching.
4. Fast Switching Speed: The MOSFET provides rapid switching capabilities, enhancing efficiency in power conversion applications.
5. Thermal Characteristics: It has good thermal stability and can operate at high temperatures, with a maximum junction temperature of 175°C.
6. Package Type: Typically offered in TO-220 or similar packages, facilitating effective heat dissipation.
These features make the STGWT60H65DFB ideal for use in power supplies, inverters, and motor control systems.

Package

The STGWT60H65DFB is packaged in a TO-247 form factor, which is a type of through-hole package commonly used for high-power applications.

Pinout

The STGWT60H65DFB is an N-channel MOSFET manufactured by STMicroelectronics. It comes in a TO-247 package with a pin count of 3.
Pin Configuration:
1. Gate (G) - This is the control terminal for the MOSFET, allowing it to switch on and off.
2. Drain (D) - Current flows out of the drain when the MOSFET is turned on.
3. Source (S) - This is the terminal through which current enters the device.
Key Functions:
- The STGWT60H65DFB is designed for high-efficiency power applications, providing low on-resistance and fast switching capability.
- It is suitable for various applications, including power supplies, motor drives, and inverters.
This MOSFET operates with a maximum drain-source voltage of 650V and can handle high currents, making it ideal for demanding applications.

Manufacturer

The STGWT60H65DFB is a power MOSFET manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company headquartered in Geneva, Switzerland. It designs, develops, manufactures, and markets a wide range of semiconductor solutions for various applications, including automotive, industrial, personal electronics, and communication. The company is known for its innovation and commitment to sustainability, offering products that enhance energy efficiency and performance in electronic devices.

Application

The STGWT60H65DFB is a 650V N-channel MOSFET primarily used in applications such as power supplies, converters, and inverters for renewable energy systems. It is suitable for motor drives, industrial automation, and automotive applications due to its high efficiency and fast switching capabilities. Additionally, it can be employed in UPS systems, LED drivers, and other high-frequency applications requiring reliable power management.

Equivalent

The STGWT60H65DFB is a fast-switching IGBT with a 600V rating and 65A current capacity. Equivalent products include the Infineon IGBT series (e.g., FGH60N60SMD), the ON Semiconductor NGTB60N60, and the Mitsubishi MG60J6ES. Always verify specifications such as voltage, current, switching speed, and thermal characteristics before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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