STGWA50H65DFB2

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STGWA50H65DFB2

IGBT TRENCH FS 650V 86A TO247

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Spécifications

Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 86 A
Current - Collector Pulsed (Icm) 150 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
Power - Max 272 W
Switching Energy 910µJ (on), 580µJ (off)
Input Type Standard
Gate Charge 151 nC
Td (on/off) @ 25°C 28ns/115ns
Test Condition 400V, 50A, 4.7Ohm, 15V
Reverse Recovery Time (trr) 92 ns
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 Long Leads
Base Product Number STGWA50

Vue d'ensemble

Description

The STGWA50H65DFB2 is a high-performance n-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power management applications. It features a maximum drain-source voltage (Vds) of 650V and a continuous drain current (Id) rating of 50A, making it suitable for high-voltage circuits. The device is characterized by its low gate charge and on-state resistance (Rds(on)), which enhance efficiency in switching applications.
This MOSFET is commonly used in power supplies, motor drives, and other applications requiring efficient power conversion and management. Its robust design allows it to handle high power loads while minimizing heat generation. The STGWA50H65DFB2 comes in a TO-220 package, facilitating easy integration into various systems.
Overall, this MOSFET is ideal for engineers looking for reliable performance in demanding power applications, combining high voltage capability with low losses.

Features

The STGWA50H65DFB2 is a high-efficiency power MOSFET designed for various applications, including power supplies and automotive systems. Key features include:
1. Voltage Rating: Supports a drain-source voltage (Vds) of up to 650V, allowing for high-voltage applications.
2. Current Rating: Provides a continuous drain current of around 50A, suitable for demanding power applications.
3. Low RDS(on): Features a low on-resistance (RDS(on)), minimizing conduction losses and improving efficiency.
4. Fast Switching: Designed for high-speed operation, which contributes to reduced switching losses.
5. Thermal Performance: Offers good thermal stability, allowing for reliable operation under varying temperatures.
6. Package: Typically available in TO-220 or similar encapsulation, facilitating easy mounting and heat dissipation.
This MOSFET is ideal for use in converters, inverters, and other applications requiring efficient power management.

Package

The STGWA50H65DFB2 is typically supplied in a TO-220 package type, which is commonly used for power devices. This package provides good thermal performance and is suitable for applications requiring efficient heat dissipation.

Pinout

The STGWA50H65DFB2 is a 650V N-channel MOSFET designed for high-performance applications. It typically comes in a TO-247 package, which has a pin count of 3. The pin functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows the MOSFET to turn on and conduct current between the drain and source.
2. Drain (D) - This is the terminal where the load is connected. In an N-channel MOSFET, current flows from the drain to the source when the device is turned on.
3. Source (S) - This pin serves as the reference point for the gate voltage and is connected to the ground or the negative side of the supply in a typical application.
The STGWA50H65DFB2 is suitable for applications like power converters, motor drives, and other switching applications due to its high efficiency and fast switching capability.

Manufacturer

The STGWA50H65DFB2 is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor solutions, including microcontrollers, memory devices, and power management ICs. They serve various industries such as automotive, industrial, consumer electronics, and telecommunications. The company is known for its innovation in technology and its commitment to sustainability, offering products that support energy efficiency and advanced applications in the Internet of Things (IoT), automotive electronics, and smart devices.

Application

The STGWA50H65DFB2 is a high-voltage N-channel MOSFET used primarily in power electronics applications. Its key areas include power supply circuits, motor drives, inverters, and renewable energy systems such as solar inverters. It is suitable for high-efficiency switching applications due to its low on-resistance and fast switching capabilities, making it ideal for industrial automation and electric vehicle powertrains as well.

Equivalent

The STGWA50H65DFB2 is a high voltage, high current IGBT module. Equivalent products include the Infineon EconoDUAL series (e.g., EconoDUAL 2), Mitsubishi CM200DY-12NF, and Fairchild FGA50N65. Always verify specifications like voltage, current, and thermal characteristics before substituting.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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