STGW60H65DFB

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STGW60H65DFB

IGBT 650V 80A 375W TO-247

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Spécifications

Package Tube
ProductStatus Last Time Buy
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 650 V
Current-Collector(Ic)(Max) 80 A
Current-CollectorPulsed(Icm) 240 A
Vce(on)(Max)@VgeIc 2V @ 15V, 60A
Power-Max 375 W
SwitchingEnergy 1.09mJ (on), 626µJ (off)
InputType Standard
GateCharge 306 nC
Td(on/off)@25°C 51ns/160ns
TestCondition 400V, 60A, 5Ohm, 15V
ReverseRecoveryTime(trr) 60 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Vue d'ensemble

Description

The STGW60H65DFB is a high-performance N-channel MOSFET designed for power electronics applications. It features a voltage rating of 650V and a continuous current rating of 60A, making it suitable for high-voltage switching applications such as inverters, power supplies, and motor drives. The device is optimized for low on-resistance (RDS(on)) and fast switching speeds, contributing to improved efficiency and reduced heat generation in power circuits.
Additionally, the STGW60H65DFB incorporates advanced features such as a rugged gate oxide and a structure that minimizes gate charge, ensuring reliable operation under various conditions. Its TO-247 package provides effective thermal management, allowing for efficient heat dissipation. This MOSFET is widely used in renewable energy systems, industrial automation, and automotive applications, where reliability and performance are critical. Overall, the STGW60H65DFB is a versatile component that meets the demanding requirements of modern power electronics.

Features

The STGW60H65DFB is a 600V, 65A N-channel Power MOSFET designed for high-efficiency applications. Key features include:
1. Low On-Resistance (RDS(on)): Ensures minimal power loss during operation, enhancing overall efficiency.
2. Fast Switching Speed: Supports high-frequency applications, making it suitable for various switching power supplies.
3. High-Voltage Capability: Rated for 600V, suitable for applications in energy management and renewable energy systems.
4. Thermal Performance: Designed with good thermal characteristics, allowing for better heat dissipation and reliability.
5. Max Gate-Source Voltage: Typically rated at ±20V, enabling flexible gate drive options.
6. Robustness: Built to withstand harsh operating conditions, ensuring longevity in demanding environments.
These features make the STGW60H65DFB ideal for use in power conversion, motor control, and other high-power applications.

Package

The STGW60H65DFB is packaged in a TO-247 format, which is commonly used for high-power transistors. This package type provides good thermal performance and is suitable for various applications in power electronics.

Pinout

The STGW60H65DFB is a 650V, 60A N-channel MOSFET from STMicroelectronics. It features a TO-220 package with three pins. The pin count is 3, and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET's operation. A voltage applied here enables or disables the flow of current between the drain and source.

2. Drain (D): This pin is the output terminal where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.

3. Source (S): This pin is connected to the ground or negative side of the power supply. It is the reference point for the voltage applied to the gate.
This MOSFET is typically used in high-voltage and high-current applications such as power supplies and motor drives.

Manufacturer

The STGW60H65DFB is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, and supplies a wide range of semiconductor products used in various applications, including automotive, industrial, personal electronics, and communication systems. The company is known for its innovation in microelectronics and power management solutions, contributing to advancements in energy efficiency and connectivity. Established through a merger in 1987, STMicroelectronics is headquartered in Geneva, Switzerland, and operates on a global scale, with manufacturing and sales operations across multiple regions.

Application

The STGW60H65DFB is a high-voltage IGBT (Insulated Gate Bipolar Transistor) primarily used in applications such as motor drives, industrial power supplies, renewable energy systems (like solar inverters), and induction heating. Its high efficiency and thermal performance make it suitable for power conversion and control in various sectors, including automotive and rail traction systems.

Equivalent

The STGW60H65DFB is a 600V, 65A IGBT from STMicroelectronics. Equivalent products include:
1. IRG4BC30KD - 600V, 30A IGBT (International Rectifier)
2. FGA60N65SMD - 650V, 60A IGBT (ON Semiconductor)
3. MG150Q2YS3 - 600V, 150A IGBT (Mitsubishi Electric)
Always verify specifications for compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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2. Carte de crédit/débit

3. Transfert bancaire

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