STGW40H65DFB

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STGW40H65DFB

IGBT 650V 80A 283W TO-247

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Spécifications

Supplier STMicroelectronics
Package Tube
ProductStatus Active
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 650 V
Current-Collector(Ic)(Max) 80 A
Current-CollectorPulsed(Icm) 160 A
Vce(on)(Max)@VgeIc 2V @ 15V, 40A
Power-Max 283 W
SwitchingEnergy 498µJ (on), 363µJ (off)
InputType Standard
GateCharge 210 nC
Td(on/off)@25°C 40ns/142ns
TestCondition 400V, 40A, 5Ohm, 15V
ReverseRecoveryTime(trr) 62 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Vue d'ensemble

Description

The STGW40H65DFB is a high-performance power MOSFET manufactured by STMicroelectronics, designed for applications requiring efficient power management and switching. It features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) rating of 40A, making it suitable for use in power supplies, motor drives, and high-voltage applications.
Key attributes include low on-resistance (R_DS(on)), which minimizes conduction losses, and a fast switching speed that enhances overall efficiency. The device is housed in a TO-220 package, allowing for effective heat dissipation and easy integration into circuits. With a gate threshold voltage (V_GS(th)) tailored for reliable operation, the STGW40H65DFB is ideal for applications such as inverters, converters, and industrial equipment.
Overall, this MOSFET combines robust performance with reliability, making it a popular choice for engineers in power electronics design.

Features

The STGW40H65DFB is a high-voltage N-channel MOSFET from STMicroelectronics, designed for various power applications. Key features include:
1. Voltage Rating: 650V, suitable for high-voltage applications.
2. Current Rating: Continuous drain current of up to 40A, allowing for robust performance.
3. R_DS(on): Low on-resistance (typically around 0.65Ω), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: V_GS(th) between 2 to 4V, providing flexibility for driver circuits.
5. Fast Switching: High-speed switching capabilities, enabling better performance in high-frequency applications.
6. Package Type: Available in an HSSO-36 package, which offers efficient thermal management.
7. Applications: Ideal for use in power supplies, motor drives, and DC-DC converters.
This MOSFET is optimized for high efficiency and thermal performance, making it suitable for demanding power management tasks in various electronic systems.

Package

The STGW40H65DFB is packaged in a TO-247 package type. This package is designed for high-power applications, offering good thermal performance and ease of mounting.

Pinout

The STGW40H65DFB is a 40A, 650V N-channel IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics. It is commonly used in applications such as motor drives, induction heating, and power converters.
Pin Count and Functions:
The STGW40H65DFB has a total of 3 pins:
1. Gate (G): The gate terminal controls the turning on and off of the IGBT. A voltage applied to this pin allows current to flow from collector to emitter.
2. Collector (C): This pin is connected to the load and serves as the main current-carrying terminal for the device. It is where the output current flows when the transistor is on.
3. Emitter (E): The emitter pin is the terminal through which the current exits the device. It is typically connected to ground or the negative side of the power supply.
The IGBT operates by applying a gate voltage to control the conduction state between collector and emitter.

Manufacturer

The STGW40H65DFB is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs and produces a wide range of semiconductor solutions, including power management, automotive, and industrial applications. The company is known for its innovation in microelectronics and serves various markets, including consumer electronics, telecommunications, and automotive sectors. With a strong focus on sustainability and energy efficiency, STMicroelectronics plays a significant role in advancing technology in the semiconductor industry.

Application

The STGW40H65DFB is a 650V, 40A IGBT primarily used in applications such as induction heating, motor drives, power inverters, and renewable energy systems (like solar inverters). It is suitable for high-frequency switching applications due to its low conduction losses and high efficiency, making it ideal for industrial automation, welding equipment, and power supplies.

Equivalent

The STGW40H65DFB is a 650V, 40A IGBT. Equivalent products include:
1. Infineon IGW40N65H3
2. ON Semiconductor MBRF4020
3. Mitsubishi MG40Q2YS40
4. Texas Instruments CSD18534Q5B
Always verify specifications for exact applications and performance requirements.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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